Abstract
We investigated the electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with top-emission and flip-chip structures. Compared with top-emission LEDs, flip-chip LEDs exhibited a 0.25 V smaller forward voltage and an 8.7 Ω lower diode resistance. The light output power of the flip-chip LED was also larger than that of the top-emission LED by factors of 1.72 and 2.0 when measured before and after packaging, respectively. The improved electrical and optical output performances of flip-chip LEDs were quantitatively analyzed in terms of device resistance and ray optics, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 180-184 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 13 |
| Issue number | 3 |
| DOIs | |
| State | Published - 2010.09 |
Keywords
- Flip-chip
- Forward voltage
- GaN
- Light emitting diode
- Light extraction
- Top-emission
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Mechanical
- Physics & Astronomy
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