Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors

Kihyun Kim; Chanoh Park; Taiuk Rim; M. Meyyappan; Jeong Soo Lee

doi:10.1109/NANO.2014.6968007

Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors

Kihyun Kim
, Chanoh Park
, Taiuk Rim
, M. Meyyappan
, Jeong Soo Lee

Division of Electronic Engineering

Pohang University of Science and Technology
NASA Ames Research Center

Research output: Contribution to conference › Conference paper › peer-review

8 Scopus citations

Abstract

The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics due to gate-all-around (GAA) structure. Furthermore, the stiction-free NW-SUS ISFETs show higher sensitivity in pH sensing, compared to the conventional devices. These investigations provide an opportunity for developing sensor platform with high sensitivity in the future.

Original language	English
Title of host publication	Proceedings of the IEEE Conference on Nanotechnology
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	768-771
Number of pages	4
ISBN (Electronic)	9781479956227
DOIs	https://doi.org/10.1109/NANO.2014.6968007
State	Published - 2014.11.26
Event	2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 - Toronto, Canada Duration: 2014.08.18 → 2014.08.21

Publication series

Name	Proceedings of the IEEE Conference on Nanotechnology
ISSN (Electronic)	1944-9399

Conference

Conference	2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014
Country/Territory	Canada
City	Toronto
Period	14.08.18 → 14.08.21

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

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10.1109/NANO.2014.6968007

Cite this

Kim, K., Park, C., Rim, T., Meyyappan, M., & Lee, J. S. (2014). Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors. In Proceedings of the IEEE Conference on Nanotechnology (pp. 768-771). Article 6968007 (Proceedings of the IEEE Conference on Nanotechnology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2014.6968007

@inproceedings{6d707fa965154f25bd545be28d92e531,

title = "Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors",

abstract = "The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics due to gate-all-around (GAA) structure. Furthermore, the stiction-free NW-SUS ISFETs show higher sensitivity in pH sensing, compared to the conventional devices. These investigations provide an opportunity for developing sensor platform with high sensitivity in the future.",

author = "Kihyun Kim and Chanoh Park and Taiuk Rim and M. Meyyappan and Lee, \{Jeong Soo\}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014 ; Conference date: 18-08-2014 Through 21-08-2014",

year = "2014",

month = nov,

day = "26",

doi = "10.1109/NANO.2014.6968007",

language = "English",

series = "Proceedings of the IEEE Conference on Nanotechnology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "Proceedings of the IEEE Conference on Nanotechnology",

}

Kim, K, Park, C, Rim, T, Meyyappan, M & Lee, JS 2014, Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors. in Proceedings of the IEEE Conference on Nanotechnology., 6968007, Proceedings of the IEEE Conference on Nanotechnology, Institute of Electrical and Electronics Engineers Inc., pp. 768-771, 2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014, Toronto, Canada, 14.08.18. https://doi.org/10.1109/NANO.2014.6968007

Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors. / Kim, Kihyun; Park, Chanoh; Rim, Taiuk et al.
Proceedings of the IEEE Conference on Nanotechnology. Institute of Electrical and Electronics Engineers Inc., 2014. p. 768-771 6968007 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors

AU - Kim, Kihyun

AU - Park, Chanoh

AU - Rim, Taiuk

AU - Meyyappan, M.

AU - Lee, Jeong Soo

PY - 2014/11/26

Y1 - 2014/11/26

N2 - The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics due to gate-all-around (GAA) structure. Furthermore, the stiction-free NW-SUS ISFETs show higher sensitivity in pH sensing, compared to the conventional devices. These investigations provide an opportunity for developing sensor platform with high sensitivity in the future.

AB - The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics due to gate-all-around (GAA) structure. Furthermore, the stiction-free NW-SUS ISFETs show higher sensitivity in pH sensing, compared to the conventional devices. These investigations provide an opportunity for developing sensor platform with high sensitivity in the future.

UR - https://www.scopus.com/pages/publications/84919490838

U2 - 10.1109/NANO.2014.6968007

DO - 10.1109/NANO.2014.6968007

M3 - Conference paper

AN - SCOPUS:84919490838

T3 - Proceedings of the IEEE Conference on Nanotechnology

SP - 768

EP - 771

BT - Proceedings of the IEEE Conference on Nanotechnology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 14th IEEE International Conference on Nanotechnology, IEEE-NANO 2014

Y2 - 18 August 2014 through 21 August 2014

ER -

Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors

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