@inproceedings{f37ee6f080384a678663ebdd7a6678b1,
title = "Electrical and structural properties of ge metal-oxide-semiconductor devices with Pt/HfO2 gate stacks",
abstract = "We investigated structural and electrical properties of Ge and Si metal oxide semiconductor (MOS) devices with Pt/HfO2 gate stacks. Post-metallization annealing in O2 ambient reduced the accumulation capacitance more significantly in Si devices than in Ge devices due to the increase in the thickness of a low-k interfacial layer in-between the HfO 2 film and Si substrate. Ge devices exhibited lower effective work function values for a Pt gate electrode than Si devices owing to the presence of a large number of positively-charged dipoles caused by strong Fermi level pinning at the Ge surface.",
author = "Choi, \{Chel Jong\} and Shin, \{Kyu Sang\} and Jeong, \{Myung Il\} and Chandra, \{S. V.Jagadeesh\}",
year = "2010",
language = "English",
isbn = "9789746724913",
series = "ECTI-CON 2010 - The 2010 ECTI International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology",
pages = "970--972",
booktitle = "ECTI-CON 2010 - The 2010 ECTI International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology",
note = "7th Annual International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology, ECTI-CON 2010 ; Conference date: 19-05-2010 Through 21-05-2010",
}