Electrical and structural properties of metal-oxide-semiconductor (MOS) Devices with Pt/Ta2O5 gate stacks

Hoon Ki Lee; S. V.Jagadeesh Chandra; Kyu Hwan Shim; Jong Won Yoon; Chel Jong Choi

doi:10.1587/transele.E94.C.846

Electrical and structural properties of metal-oxide-semiconductor (MOS) Devices with Pt/Ta₂O₅ gate stacks

Hoon Ki Lee^*
, S. V.Jagadeesh Chandra
, Kyu Hwan Shim
, Jong Won Yoon
, Chel Jong Choi

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Abstract

We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta ₂O₅ gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta₂O₅ film, the values of equivalent oxide thickness (EOT) and flat band voltage (VFB) increase whilst the density of interfacial trap (Dit) gradually decreases. The effective metal work function (Fm,eff) of Pt metal gate, extracted from the relations of EOT versus VFB are calculated to be ̃5.29 eV, implying that Fermi-level pinning in Ta₂O₅ gate dielectric is insignificant.

Original language	English
Pages (from-to)	846-849
Number of pages	4
Journal	IEICE Transactions on Electronics
Volume	E94-C
Issue number	5
DOIs	https://doi.org/10.1587/transele.E94.C.846
State	Published - 2011.05

Keywords

Effective metal workfunction
EOT
Flat band voltage
MOS

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1587/transele.E94.C.846

Cite this

@article{a776ccda802c496a8001d78356838026,

title = "Electrical and structural properties of metal-oxide-semiconductor (MOS) Devices with Pt/Ta2O5 gate stacks",

abstract = "We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta 2O5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta2O5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (VFB) increase whilst the density of interfacial trap (Dit) gradually decreases. The effective metal work function (Fm,eff) of Pt metal gate, extracted from the relations of EOT versus VFB are calculated to be{\~ }5.29 eV, implying that Fermi-level pinning in Ta2O5 gate dielectric is insignificant.",

keywords = "Effective metal workfunction, EOT, Flat band voltage, MOS",

author = "Lee, \{Hoon Ki\} and Chandra, \{S. V.Jagadeesh\} and Shim, \{Kyu Hwan\} and Yoon, \{Jong Won\} and Choi, \{Chel Jong\}",

year = "2011",

month = may,

doi = "10.1587/transele.E94.C.846",

language = "English",

volume = "E94-C",

pages = "846--849",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

number = "5",

}

TY - JOUR

T1 - Electrical and structural properties of metal-oxide-semiconductor (MOS) Devices with Pt/Ta2O5 gate stacks

AU - Lee, Hoon Ki

AU - Chandra, S. V.Jagadeesh

AU - Shim, Kyu Hwan

AU - Yoon, Jong Won

AU - Choi, Chel Jong

PY - 2011/5

Y1 - 2011/5

N2 - We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta 2O5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta2O5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (VFB) increase whilst the density of interfacial trap (Dit) gradually decreases. The effective metal work function (Fm,eff) of Pt metal gate, extracted from the relations of EOT versus VFB are calculated to be ̃5.29 eV, implying that Fermi-level pinning in Ta2O5 gate dielectric is insignificant.

AB - We fabricated metal-oxide-semiconductor (MOS) devices with Pt/Ta 2O5 gate stacks and investigated their electrical and structural properties. As increasing RF magnetron sputter-deposition time of Ta2O5 film, the values of equivalent oxide thickness (EOT) and flat band voltage (VFB) increase whilst the density of interfacial trap (Dit) gradually decreases. The effective metal work function (Fm,eff) of Pt metal gate, extracted from the relations of EOT versus VFB are calculated to be ̃5.29 eV, implying that Fermi-level pinning in Ta2O5 gate dielectric is insignificant.

KW - Effective metal workfunction

KW - EOT

KW - Flat band voltage

KW - MOS

UR - https://www.scopus.com/pages/publications/79955605414

U2 - 10.1587/transele.E94.C.846

DO - 10.1587/transele.E94.C.846

M3 - Journal article

AN - SCOPUS:79955605414

SN - 0916-8524

VL - E94-C

SP - 846

EP - 849

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 5

ER -