Electrical characteristics of metal contacts to laser-irradiated N-polar n-type GaN

Hyunsoo Kim; Jae Hyun Ryou; Russell D. Dupuis; Taesung Jang; Yongjo Park; Sung Nam Lee; Tae Yeon Seong

doi:10.1109/LED.2009.2013486

Electrical characteristics of metal contacts to laser-irradiated N-polar n-type GaN

Hyunsoo Kim^*
, Jae Hyun Ryou
, Russell D. Dupuis
, Taesung Jang
, Yongjo Park
, Sung Nam Lee
, Tae Yeon Seong

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Georgia Institute of Technology
Samsung
Silla University
Korea University

Research output: Contribution to journal › Journal article › peer-review

11 Scopus citations

Abstract

Electrical characteristics of metal contacts to a laser-irradiated thin-film N-polar n-type GaN surface are investigated. It is shown that the laser irradiation of the N-polar n-GaN results in a significant increase (as high as 3.0 × 10 cm³) in the electron concentration and a decrease in the Schottky barrier height by 0.05 eV (0.28 eV), as estimated using Pt-based Schottky diodes (X-ray photoemission spectroscopy). Ti/Al contacts to the laser-irradiated N-polar sample exhibit an excellent Ohmic behavior with thermal stability up to 600 °C, indicating that the laser irradiation treatment can be a very promising technology in practical applications.

Original language	English
Pages (from-to)	319-321
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	4
DOIs	https://doi.org/10.1109/LED.2009.2013486
State	Published - 2009

Keywords

Contact
GaN
N-polar
Schottky barrier heights (SBHs)

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10.1109/LED.2009.2013486

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title = "Electrical characteristics of metal contacts to laser-irradiated N-polar n-type GaN",

abstract = "Electrical characteristics of metal contacts to a laser-irradiated thin-film N-polar n-type GaN surface are investigated. It is shown that the laser irradiation of the N-polar n-GaN results in a significant increase (as high as 3.0 × 10 cm3) in the electron concentration and a decrease in the Schottky barrier height by 0.05 eV (0.28 eV), as estimated using Pt-based Schottky diodes (X-ray photoemission spectroscopy). Ti/Al contacts to the laser-irradiated N-polar sample exhibit an excellent Ohmic behavior with thermal stability up to 600 °C, indicating that the laser irradiation treatment can be a very promising technology in practical applications.",

keywords = "Contact, GaN, N-polar, Schottky barrier heights (SBHs)",

author = "Hyunsoo Kim and Ryou, \{Jae Hyun\} and Dupuis, \{Russell D.\} and Taesung Jang and Yongjo Park and Lee, \{Sung Nam\} and Seong, \{Tae Yeon\}",

year = "2009",

doi = "10.1109/LED.2009.2013486",

language = "English",

volume = "30",

pages = "319--321",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

number = "4",

}

TY - JOUR

T1 - Electrical characteristics of metal contacts to laser-irradiated N-polar n-type GaN

AU - Kim, Hyunsoo

AU - Ryou, Jae Hyun

AU - Dupuis, Russell D.

AU - Jang, Taesung

AU - Park, Yongjo

AU - Lee, Sung Nam

AU - Seong, Tae Yeon

PY - 2009

Y1 - 2009

N2 - Electrical characteristics of metal contacts to a laser-irradiated thin-film N-polar n-type GaN surface are investigated. It is shown that the laser irradiation of the N-polar n-GaN results in a significant increase (as high as 3.0 × 10 cm3) in the electron concentration and a decrease in the Schottky barrier height by 0.05 eV (0.28 eV), as estimated using Pt-based Schottky diodes (X-ray photoemission spectroscopy). Ti/Al contacts to the laser-irradiated N-polar sample exhibit an excellent Ohmic behavior with thermal stability up to 600 °C, indicating that the laser irradiation treatment can be a very promising technology in practical applications.

AB - Electrical characteristics of metal contacts to a laser-irradiated thin-film N-polar n-type GaN surface are investigated. It is shown that the laser irradiation of the N-polar n-GaN results in a significant increase (as high as 3.0 × 10 cm3) in the electron concentration and a decrease in the Schottky barrier height by 0.05 eV (0.28 eV), as estimated using Pt-based Schottky diodes (X-ray photoemission spectroscopy). Ti/Al contacts to the laser-irradiated N-polar sample exhibit an excellent Ohmic behavior with thermal stability up to 600 °C, indicating that the laser irradiation treatment can be a very promising technology in practical applications.

KW - Contact

KW - GaN

KW - N-polar

KW - Schottky barrier heights (SBHs)

UR - https://www.scopus.com/pages/publications/67349083543

U2 - 10.1109/LED.2009.2013486

DO - 10.1109/LED.2009.2013486

M3 - Journal article

AN - SCOPUS:67349083543

SN - 0741-3106

VL - 30

SP - 319

EP - 321

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 4

ER -

Electrical characteristics of metal contacts to laser-irradiated N-polar n-type GaN

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Keywords

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