@inproceedings{1654e329d1694ce48748837bf8d0be37,
title = "Electrical characteristics of Pt Schottky contact to semipolar (11-22) n-GaN depending on Si Doping concentration",
abstract = "Electrical characteristics of Pt Schottky contact formed on semipolar (11-22) n-type GaN planes with different Si doping concentration were investigated. Large Si doping to semipolar (11-22) n-GaN led to improved electrical and structural properties, e.g., the Hall mobility (μ) was increased by 35 \% and the full width at half maximum (FWHM) of X-ray rocking curves with X-ray incident beam direction of [-1-12 was decreased by 34 \%. Thermionic field emission (TFE) theory applied to the forward current-voltage (I-V) curves of fabricated Pt Schottky diodes yielded the Schottky barrier height (ΦB) of 1.64 and 1.84 eV, the tunneling parameter (E00) of 44 and 65 meV, and the ideality factor (n) of 1.83 and 2.57 for the lowly doped and highly doped samples, respectively, indicating that the Si doping affected the carrier transport properties substantially associated with the change of surface states density.",
keywords = "Carrier transport, Schottky diode, Semipolar n-GaN, Si doping",
author = "Jung, \{Sung Min\} and Kim, \{Kyoung Kook\} and Lee, \{Sung Nam\} and Kim, \{Hyun Soo\}",
year = "2013",
doi = "10.4028/www.scientific.net/AMM.404.146",
language = "English",
isbn = "9783037858455",
series = "Applied Mechanics and Materials",
pages = "146--151",
booktitle = "Engineering Decisions for Manufacturing Systems",
note = "2nd International Symposium on Manufacturing Systems Engineering, ISMSE 2013 ; Conference date: 27-07-2013 Through 29-07-2013",
}