Electrical characteristics of Pt Schottky contacts on AlInN:Mg/GaN heterostructures

The electrical characteristics of Pt Schottky contacts on AlInN:Mg/GaN heterostructures were investigated. A barrier inhomogeneity model applied to temperature-dependent forward current-voltage (I-V) curves revealed the mean barrier height of 1.67 eV and the standard deviation of 0.22 eV. The reverse leakage current could be understood in terms of the Poole-Frenkel emission model, yielding the emission barrier height of 0.26 eV and the high-frequency relative dielectric permittivity of 5.32. On the basis of these obtained values, the continuum of electronic states could be predicted to locate 1.41 eV below the valence band.