| Original language | Korean |
|---|---|
| Journal | Superlattices and Microstructures |
| State | Published - 2014.03.3 |
Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver
Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode
Research output: Contribution to journal › Journal article › peer-review