Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation

Alexander Y. Polyakov; Nikolai B. Smirnov; Anatoliy V. Govorkov; Alexander V. Markov; Cheul Ro Lee; In Hwan Lee; Nikolai G. Kolin; Denis I. Merkurisov; Vladimir M. Boiko; James S. Wright

doi:10.1557/proc-0955-i15-11

Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation

Alexander Y. Polyakov
, Nikolai B. Smirnov
, Anatoliy V. Govorkov
, Alexander V. Markov
, Cheul Ro Lee
, In Hwan Lee
, Nikolai G. Kolin
, Denis I. Merkurisov
, Vladimir M. Boiko
, James S. Wright

Information Materials Engineering

Institute of Rare Metals
Jeonbuk National University
Karpov Institute of Physical Chemistry
University of Florida

Research output: Contribution to conference › Conference paper › peer-review

Abstract

Current-voltage, capacitance-voltage characteristics, admittance spectra, deep traps spectra (DLTS), microcathodoluminescence (MCL) spectra of undoped n-GaN/InGaN multiquantum well (MQW) structures were studied before and after 10 MeV electron irradiation. The current flow in the studied structures was found to be determined by strong tunneling while the presence of piezoelectric field manifested itself in the red spectral shift of the quantum well related peak and a marked dependence of the peak position on applied external electric field. DLTS spectra showed unusual features that could be related to transient screening of polarization charges. Electron irradiation introduced a high density of band-like states that could be due to interface traps in the MQWs.

Original language	English
Title of host publication	Advances in III-V Nitride Semiconductor Materials and Devices
Publisher	Materials Research Society
Pages	375-377
Number of pages	3
ISBN (Print)	9781604234114
DOIs	https://doi.org/10.1557/proc-0955-i15-11
State	Published - 2006
Event	2006 MRS Fall Meeting - Boston, MA, United States Duration: 2006.11.27 → 2006.12.1

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	955
ISSN (Print)	0272-9172

Conference

Conference	2006 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	06.11.27 → 06.12.1

Quacquarelli Symonds(QS) Subject Topics

Engineering - Mechanical
Materials Science
Physics & Astronomy

Access to Document

10.1557/proc-0955-i15-11

Cite this

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Lee, C. R., Lee, I. H., Kolin, N. G., Merkurisov, D. I., Boiko, V. M., & Wright, J. S. (2006). Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. In Advances in III-V Nitride Semiconductor Materials and Devices (pp. 375-377). (Materials Research Society Symposium Proceedings; Vol. 955). Materials Research Society. https://doi.org/10.1557/proc-0955-i15-11

Polyakov, Alexander Y. ; Smirnov, Nikolai B. ; Govorkov, Anatoliy V. et al. / Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society, 2006. pp. 375-377 (Materials Research Society Symposium Proceedings).

@inproceedings{3896e5240aa24e7c91e26b79c415a15f,

title = "Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation",

abstract = "Current-voltage, capacitance-voltage characteristics, admittance spectra, deep traps spectra (DLTS), microcathodoluminescence (MCL) spectra of undoped n-GaN/InGaN multiquantum well (MQW) structures were studied before and after 10 MeV electron irradiation. The current flow in the studied structures was found to be determined by strong tunneling while the presence of piezoelectric field manifested itself in the red spectral shift of the quantum well related peak and a marked dependence of the peak position on applied external electric field. DLTS spectra showed unusual features that could be related to transient screening of polarization charges. Electron irradiation introduced a high density of band-like states that could be due to interface traps in the MQWs.",

author = "Polyakov, \{Alexander Y.\} and Smirnov, \{Nikolai B.\} and Govorkov, \{Anatoliy V.\} and Markov, \{Alexander V.\} and Lee, \{Cheul Ro\} and Lee, \{In Hwan\} and Kolin, \{Nikolai G.\} and Merkurisov, \{Denis I.\} and Boiko, \{Vladimir M.\} and Wright, \{James S.\}",

year = "2006",

doi = "10.1557/proc-0955-i15-11",

language = "English",

isbn = "9781604234114",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "375--377",

booktitle = "Advances in III-V Nitride Semiconductor Materials and Devices",

note = "2006 MRS Fall Meeting ; Conference date: 27-11-2006 Through 01-12-2006",

}

Polyakov, AY, Smirnov, NB, Govorkov, AV, Markov, AV, Lee, CR, Lee, IH, Kolin, NG, Merkurisov, DI, Boiko, VM & Wright, JS 2006, Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. in Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society Symposium Proceedings, vol. 955, Materials Research Society, pp. 375-377, 2006 MRS Fall Meeting, Boston, MA, United States, 06.11.27. https://doi.org/10.1557/proc-0955-i15-11

Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. / Polyakov, Alexander Y.; Smirnov, Nikolai B.; Govorkov, Anatoliy V. et al.
Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society, 2006. p. 375-377 (Materials Research Society Symposium Proceedings; Vol. 955).

Research output: Contribution to conference › Conference paper › peer-review

TY - GEN

T1 - Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation

AU - Polyakov, Alexander Y.

AU - Smirnov, Nikolai B.

AU - Govorkov, Anatoliy V.

AU - Markov, Alexander V.

AU - Lee, Cheul Ro

AU - Lee, In Hwan

AU - Kolin, Nikolai G.

AU - Merkurisov, Denis I.

AU - Boiko, Vladimir M.

AU - Wright, James S.

PY - 2006

Y1 - 2006

N2 - Current-voltage, capacitance-voltage characteristics, admittance spectra, deep traps spectra (DLTS), microcathodoluminescence (MCL) spectra of undoped n-GaN/InGaN multiquantum well (MQW) structures were studied before and after 10 MeV electron irradiation. The current flow in the studied structures was found to be determined by strong tunneling while the presence of piezoelectric field manifested itself in the red spectral shift of the quantum well related peak and a marked dependence of the peak position on applied external electric field. DLTS spectra showed unusual features that could be related to transient screening of polarization charges. Electron irradiation introduced a high density of band-like states that could be due to interface traps in the MQWs.

AB - Current-voltage, capacitance-voltage characteristics, admittance spectra, deep traps spectra (DLTS), microcathodoluminescence (MCL) spectra of undoped n-GaN/InGaN multiquantum well (MQW) structures were studied before and after 10 MeV electron irradiation. The current flow in the studied structures was found to be determined by strong tunneling while the presence of piezoelectric field manifested itself in the red spectral shift of the quantum well related peak and a marked dependence of the peak position on applied external electric field. DLTS spectra showed unusual features that could be related to transient screening of polarization charges. Electron irradiation introduced a high density of band-like states that could be due to interface traps in the MQWs.

UR - https://www.scopus.com/pages/publications/40949112848

U2 - 10.1557/proc-0955-i15-11

DO - 10.1557/proc-0955-i15-11

M3 - Conference paper

AN - SCOPUS:40949112848

SN - 9781604234114

T3 - Materials Research Society Symposium Proceedings

SP - 375

EP - 377

BT - Advances in III-V Nitride Semiconductor Materials and Devices

PB - Materials Research Society

T2 - 2006 MRS Fall Meeting

Y2 - 27 November 2006 through 1 December 2006

ER -

Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Lee CR, Lee IH et al. Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation. In Advances in III-V Nitride Semiconductor Materials and Devices. Materials Research Society. 2006. p. 375-377. (Materials Research Society Symposium Proceedings). doi: 10.1557/proc-0955-i15-11

Electrical properties, deep levels spectra and luminescence of undoped GaN/InGaN multi-quantum-well structures as affected by electron irradiation

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