Electrical properties of Bi-layered Bi₃TiTaO₉ films grown by pulsed laser deposition

Ferroelectric Bi₃TiTaO₉ (BTT) thin films were grown by pulsed laser deposition on Pt/Ti /SiO₂/Si substrates using stoichiometric target and 15% Bi-excess target. Films grown using the Bi-excess target exhibited better saturation behaviors and squareness in electrical hysteresis loops than those grown using the stoichiometric target. The films showed good retention characteristics and there was nearly no loss in switchable polarization after waiting time of 1.66×10⁴ seconds. The remnant polarization degraded to about 60 % of the initial value after 3×10⁷ switching cycles for the films grown using Bi-excess target. The films grown using the stoichiometric target became too leaky at the initial stage of switching cycles.