Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer

A. Ashok Kumar; V. Rajagopal Reddy; V. Janardhanam; Hyun Deok Yang; Hyung Joong Yun; Chel Jong Choi

doi:10.1016/j.jallcom.2012.09.085

Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer

A. Ashok Kumar
, V. Rajagopal Reddy
, V. Janardhanam
, Hyun Deok Yang
, Hyung Joong Yun
, Chel Jong Choi^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

36 Scopus citations

Abstract

The effect of poly (3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) interlayer on the Schottky barrier parameters of Pt/n-type Ge Schottky contacts was investigated. The PEDOT:PSS interlayer in between Pt and n-type Ge influences the space charge region of the Pt/n-type Ge Schottky junction, leading to increase in the barrier height. Due to interface dipoles and lateral barrier inhomogeneities caused by the presence of PEDOT:PSS interlayer, Pt/PEDOT:PSS/n-type Ge Schottky contact showed a deviation from the ideal thermionic emission model of the carrier transport at the metal/semiconductor junction. From the reverse current-voltage (I-V) characteristics, the Poole-Frenkel emission and Schottky emission were found to be the dominating carrier conduction mechanisms of Pt/PEDOT:PSS/n-type Ge Schottky contact at lower and higher reverse biases, respectively.

Original language	English
Pages (from-to)	18-21
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	549
DOIs	https://doi.org/10.1016/j.jallcom.2012.09.085
State	Published - 2013.02.5

Keywords

Ge
PEDOT:PSS
Poole-Frenkel emission
Schottky contact
Schottky emission

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical

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10.1016/j.jallcom.2012.09.085

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@article{437cfcead589468a958eb865771daf8d,

title = "Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer",

abstract = "The effect of poly (3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) interlayer on the Schottky barrier parameters of Pt/n-type Ge Schottky contacts was investigated. The PEDOT:PSS interlayer in between Pt and n-type Ge influences the space charge region of the Pt/n-type Ge Schottky junction, leading to increase in the barrier height. Due to interface dipoles and lateral barrier inhomogeneities caused by the presence of PEDOT:PSS interlayer, Pt/PEDOT:PSS/n-type Ge Schottky contact showed a deviation from the ideal thermionic emission model of the carrier transport at the metal/semiconductor junction. From the reverse current-voltage (I-V) characteristics, the Poole-Frenkel emission and Schottky emission were found to be the dominating carrier conduction mechanisms of Pt/PEDOT:PSS/n-type Ge Schottky contact at lower and higher reverse biases, respectively.",

keywords = "Ge, PEDOT:PSS, Poole-Frenkel emission, Schottky contact, Schottky emission",

author = "\{Ashok Kumar\}, A. and \{Rajagopal Reddy\}, V. and V. Janardhanam and Yang, \{Hyun Deok\} and Yun, \{Hyung Joong\} and Choi, \{Chel Jong\}",

year = "2013",

month = feb,

day = "5",

doi = "10.1016/j.jallcom.2012.09.085",

language = "English",

volume = "549",

pages = "18--21",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

}

TY - JOUR

T1 - Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer

AU - Ashok Kumar, A.

AU - Rajagopal Reddy, V.

AU - Janardhanam, V.

AU - Yang, Hyun Deok

AU - Yun, Hyung Joong

AU - Choi, Chel Jong

PY - 2013/2/5

Y1 - 2013/2/5

N2 - The effect of poly (3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) interlayer on the Schottky barrier parameters of Pt/n-type Ge Schottky contacts was investigated. The PEDOT:PSS interlayer in between Pt and n-type Ge influences the space charge region of the Pt/n-type Ge Schottky junction, leading to increase in the barrier height. Due to interface dipoles and lateral barrier inhomogeneities caused by the presence of PEDOT:PSS interlayer, Pt/PEDOT:PSS/n-type Ge Schottky contact showed a deviation from the ideal thermionic emission model of the carrier transport at the metal/semiconductor junction. From the reverse current-voltage (I-V) characteristics, the Poole-Frenkel emission and Schottky emission were found to be the dominating carrier conduction mechanisms of Pt/PEDOT:PSS/n-type Ge Schottky contact at lower and higher reverse biases, respectively.

AB - The effect of poly (3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) interlayer on the Schottky barrier parameters of Pt/n-type Ge Schottky contacts was investigated. The PEDOT:PSS interlayer in between Pt and n-type Ge influences the space charge region of the Pt/n-type Ge Schottky junction, leading to increase in the barrier height. Due to interface dipoles and lateral barrier inhomogeneities caused by the presence of PEDOT:PSS interlayer, Pt/PEDOT:PSS/n-type Ge Schottky contact showed a deviation from the ideal thermionic emission model of the carrier transport at the metal/semiconductor junction. From the reverse current-voltage (I-V) characteristics, the Poole-Frenkel emission and Schottky emission were found to be the dominating carrier conduction mechanisms of Pt/PEDOT:PSS/n-type Ge Schottky contact at lower and higher reverse biases, respectively.

KW - Ge

KW - PEDOT:PSS

KW - Poole-Frenkel emission

KW - Schottky contact

KW - Schottky emission

UR - https://www.scopus.com/pages/publications/84867894469

U2 - 10.1016/j.jallcom.2012.09.085

DO - 10.1016/j.jallcom.2012.09.085

M3 - Journal article

AN - SCOPUS:84867894469

SN - 0925-8388

VL - 549

SP - 18

EP - 21

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Electrical properties of Pt/n-type Ge Schottky contact with PEDOT:PSS interlayer

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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