Electrical properties of SrTiO3 and SrTiO3/NiO thin films in heterojunction devices

Soumen Das; Daan Liu; Chel Jong Choi; Yoon Bong Hahn

doi:10.1166/sam.2014.1961

Electrical properties of SrTiO₃ and SrTiO₃/NiO thin films in heterojunction devices

Soumen Das
, Daan Liu
, Chel Jong Choi
, Yoon Bong Hahn^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

The temperature-dependent electrical properties of solution-processed SrTiO₃ (STO) and NiO/STO thin films in heterojunction devices were investigated at 50-150 °C. The band offsets were measured by XPS through the core level (CL) binding energy peak positions of Sr3d, Ti2p, Ni2p and O1s. Diode like features in current (I)- voltage (V) response indicated interface-limited Schottky emission as the calculated optical dielectric constants, 4.11 for STO and 6.26 for NiO. The interfacial potential barrier height at zero bias was ~0.30 eV for both Si/Pt/STO/Pt and Si/Pt/STO/NiO/Pt assemblies, indicating that reduction of leakage current owes it to the large conduction and valence band offset of ~2.02 and 2.17 eV, respectively.

Original language	English
Pages (from-to)	1888-1891
Number of pages	4
Journal	Science of Advanced Materials
Volume	6
Issue number	8
DOIs	https://doi.org/10.1166/sam.2014.1961
State	Published - 2014

Keywords

Band offset
Interfacial barrier height
Schottky diode

Quacquarelli Symonds(QS) Subject Topics

Materials Science

Access to Document

10.1166/sam.2014.1961

Cite this

@article{6ad82e36506f483e9acc6d322eaeb891,

title = "Electrical properties of SrTiO3 and SrTiO3/NiO thin films in heterojunction devices",

abstract = "The temperature-dependent electrical properties of solution-processed SrTiO3 (STO) and NiO/STO thin films in heterojunction devices were investigated at 50-150 °C. The band offsets were measured by XPS through the core level (CL) binding energy peak positions of Sr3d, Ti2p, Ni2p and O1s. Diode like features in current (I)- voltage (V) response indicated interface-limited Schottky emission as the calculated optical dielectric constants, 4.11 for STO and 6.26 for NiO. The interfacial potential barrier height at zero bias was \textasciitilde{}0.30 eV for both Si/Pt/STO/Pt and Si/Pt/STO/NiO/Pt assemblies, indicating that reduction of leakage current owes it to the large conduction and valence band offset of \textasciitilde{}2.02 and 2.17 eV, respectively.",

keywords = "Band offset, Interfacial barrier height, Schottky diode",

author = "Soumen Das and Daan Liu and Choi, \{Chel Jong\} and Hahn, \{Yoon Bong\}",

year = "2014",

doi = "10.1166/sam.2014.1961",

language = "English",

volume = "6",

pages = "1888--1891",

journal = "Science of Advanced Materials",

issn = "1947-2935",

number = "8",

}

TY - JOUR

T1 - Electrical properties of SrTiO3 and SrTiO3/NiO thin films in heterojunction devices

AU - Das, Soumen

AU - Liu, Daan

AU - Choi, Chel Jong

AU - Hahn, Yoon Bong

PY - 2014

Y1 - 2014

N2 - The temperature-dependent electrical properties of solution-processed SrTiO3 (STO) and NiO/STO thin films in heterojunction devices were investigated at 50-150 °C. The band offsets were measured by XPS through the core level (CL) binding energy peak positions of Sr3d, Ti2p, Ni2p and O1s. Diode like features in current (I)- voltage (V) response indicated interface-limited Schottky emission as the calculated optical dielectric constants, 4.11 for STO and 6.26 for NiO. The interfacial potential barrier height at zero bias was ~0.30 eV for both Si/Pt/STO/Pt and Si/Pt/STO/NiO/Pt assemblies, indicating that reduction of leakage current owes it to the large conduction and valence band offset of ~2.02 and 2.17 eV, respectively.

AB - The temperature-dependent electrical properties of solution-processed SrTiO3 (STO) and NiO/STO thin films in heterojunction devices were investigated at 50-150 °C. The band offsets were measured by XPS through the core level (CL) binding energy peak positions of Sr3d, Ti2p, Ni2p and O1s. Diode like features in current (I)- voltage (V) response indicated interface-limited Schottky emission as the calculated optical dielectric constants, 4.11 for STO and 6.26 for NiO. The interfacial potential barrier height at zero bias was ~0.30 eV for both Si/Pt/STO/Pt and Si/Pt/STO/NiO/Pt assemblies, indicating that reduction of leakage current owes it to the large conduction and valence band offset of ~2.02 and 2.17 eV, respectively.

KW - Band offset

KW - Interfacial barrier height

KW - Schottky diode

UR - https://www.scopus.com/pages/publications/84905116702

U2 - 10.1166/sam.2014.1961

DO - 10.1166/sam.2014.1961

M3 - Journal article

AN - SCOPUS:84905116702

SN - 1947-2935

VL - 6

SP - 1888

EP - 1891

JO - Science of Advanced Materials

JF - Science of Advanced Materials

IS - 8

ER -