Electrical property of vertically grown carbon nanotube and its application to the nanofunctional devices

Jaeuk Chu; Kwangseok Jeong; Eunju Bae; Inkyeong Yoo; Wonbong Choi; Jujin Kim

doi:10.1557/proc-675-w9.3.1

Electrical property of vertically grown carbon nanotube and its application to the nanofunctional devices

Jaeuk Chu^*
, Kwangseok Jeong
, Eunju Bae
, Inkyeong Yoo
, Wonbong Choi
, Jujin Kim

^*Corresponding author for this work

Department of Physics

Samsung

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A highly ordered porous alumina array which hole size is decreased down to 20nm was fabricated by a two step anodization method. Carbon Nanotube was grown vertically with thermal CVD at 600∼700°C. By using rapid thermal annealing method, low-ohmic contact was formed between multi wall nanotubes and metal electrode and its resistance shows tens to hundreds Ω. The alumina layer which is existed between nanotube and electrode acts as a barrier for conductance. The resistance of carbon nanotube shows the temperature(T¹) dependence at 4.21K < T < 19.9K and semiconducting behavior at this temperature region.

Original language	English
Pages (from-to)	W9.3.1-W9.3.5
Journal	Materials Research Society Symposium - Proceedings
Volume	675
DOIs	https://doi.org/10.1557/proc-675-w9.3.1
State	Published - 2001
Event	Nanotubes, Fullerenes, Nanostructured and Disordered Carbon - San Francisco, CA, United States Duration: 2001.04.17 → 2001.04.20

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title = "Electrical property of vertically grown carbon nanotube and its application to the nanofunctional devices",

abstract = "A highly ordered porous alumina array which hole size is decreased down to 20nm was fabricated by a two step anodization method. Carbon Nanotube was grown vertically with thermal CVD at 600∼700°C. By using rapid thermal annealing method, low-ohmic contact was formed between multi wall nanotubes and metal electrode and its resistance shows tens to hundreds Ω. The alumina layer which is existed between nanotube and electrode acts as a barrier for conductance. The resistance of carbon nanotube shows the temperature(T1) dependence at 4.21K < T < 19.9K and semiconducting behavior at this temperature region.",

author = "Jaeuk Chu and Kwangseok Jeong and Eunju Bae and Inkyeong Yoo and Wonbong Choi and Jujin Kim",

year = "2001",

doi = "10.1557/proc-675-w9.3.1",

language = "English",

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pages = "W9.3.1--W9.3.5",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Electrical property of vertically grown carbon nanotube and its application to the nanofunctional devices

AU - Chu, Jaeuk

AU - Jeong, Kwangseok

AU - Bae, Eunju

AU - Yoo, Inkyeong

AU - Choi, Wonbong

AU - Kim, Jujin

PY - 2001

Y1 - 2001

N2 - A highly ordered porous alumina array which hole size is decreased down to 20nm was fabricated by a two step anodization method. Carbon Nanotube was grown vertically with thermal CVD at 600∼700°C. By using rapid thermal annealing method, low-ohmic contact was formed between multi wall nanotubes and metal electrode and its resistance shows tens to hundreds Ω. The alumina layer which is existed between nanotube and electrode acts as a barrier for conductance. The resistance of carbon nanotube shows the temperature(T1) dependence at 4.21K < T < 19.9K and semiconducting behavior at this temperature region.

AB - A highly ordered porous alumina array which hole size is decreased down to 20nm was fabricated by a two step anodization method. Carbon Nanotube was grown vertically with thermal CVD at 600∼700°C. By using rapid thermal annealing method, low-ohmic contact was formed between multi wall nanotubes and metal electrode and its resistance shows tens to hundreds Ω. The alumina layer which is existed between nanotube and electrode acts as a barrier for conductance. The resistance of carbon nanotube shows the temperature(T1) dependence at 4.21K < T < 19.9K and semiconducting behavior at this temperature region.

UR - https://www.scopus.com/pages/publications/0035557847

U2 - 10.1557/proc-675-w9.3.1

DO - 10.1557/proc-675-w9.3.1

M3 - Conference article

AN - SCOPUS:0035557847

SN - 0272-9172

VL - 675

SP - W9.3.1-W9.3.5

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Nanotubes, Fullerenes, Nanostructured and Disordered Carbon

Y2 - 17 April 2001 through 20 April 2001

ER -

Electrical property of vertically grown carbon nanotube and its application to the nanofunctional devices

Abstract

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