Electrical transport characterization of PEDOT: PSS/n-Si schottky diodes and their applications in solar cells

Zagarzusem Khurelbaatar; Jung Hwan Hyung; Gil Sung Kim; No Won Park; Kyu Hwan Shim; Sang Kwon Lee

doi:10.1166/jnn.2014.7937

Electrical transport characterization of PEDOT: PSS/n-Si schottky diodes and their applications in solar cells

Zagarzusem Khurelbaatar
, Jung Hwan Hyung
, Gil Sung Kim
, No Won Park
, Kyu Hwan Shim
, Sang Kwon Lee^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Jeonbuk National University
Chung-Ang University

Research output: Contribution to journal › Journal article › peer-review

5 Scopus citations

Abstract

We demonstrate locally contacted PEDOT: PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of ∼10⁶. Schottky junction solar cells composed of PEDOT: PSS and n-Si structures were also examined. From the current density-voltage {J-V) measurement of a solar cell under illumination, the short circuit current (/_sc), open circuit voltage (V_oc), and conversion efficiency (17) were ∼19.7 mA/cm², ∼ 578.5 mV, and ∼6.5%, respectively. The simple and low-cost fabrication process of the PEDOT: PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.

Original language	English
Pages (from-to)	4394-4399
Number of pages	6
Journal	Journal of nanoscience and nanotechnology
Volume	14
Issue number	6
DOIs	https://doi.org/10.1166/jnn.2014.7937
State	Published - 2014.06

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Capacitance-voltage measurement
Conversion efficiency
Current-voltage measurement
Pedot: PSS
Schottky diodes

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Chemical
Chemistry
Physics & Astronomy
Biological Sciences

Access to Document

10.1166/jnn.2014.7937

Cite this

@article{408893088b574a37837b1c8810b91c57,

title = "Electrical transport characterization of PEDOT: PSS/n-Si schottky diodes and their applications in solar cells",

abstract = "We demonstrate locally contacted PEDOT: PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of ∼106. Schottky junction solar cells composed of PEDOT: PSS and n-Si structures were also examined. From the current density-voltage \{J-V) measurement of a solar cell under illumination, the short circuit current (/sc), open circuit voltage (Voc), and conversion efficiency (17) were ∼19.7 mA/cm2, ∼ 578.5 mV, and ∼6.5\%, respectively. The simple and low-cost fabrication process of the PEDOT: PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.",

keywords = "Capacitance-voltage measurement, Conversion efficiency, Current-voltage measurement, Pedot: PSS, Schottky diodes",

author = "Zagarzusem Khurelbaatar and Hyung, \{Jung Hwan\} and Kim, \{Gil Sung\} and Park, \{No Won\} and Shim, \{Kyu Hwan\} and Lee, \{Sang Kwon\}",

year = "2014",

month = jun,

doi = "10.1166/jnn.2014.7937",

language = "English",

volume = "14",

pages = "4394--4399",

journal = "Journal of nanoscience and nanotechnology",

issn = "1533-4880",

number = "6",

}

TY - JOUR

T1 - Electrical transport characterization of PEDOT

T2 - PSS/n-Si schottky diodes and their applications in solar cells

AU - Khurelbaatar, Zagarzusem

AU - Hyung, Jung Hwan

AU - Kim, Gil Sung

AU - Park, No Won

AU - Shim, Kyu Hwan

AU - Lee, Sang Kwon

PY - 2014/6

Y1 - 2014/6

N2 - We demonstrate locally contacted PEDOT: PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of ∼106. Schottky junction solar cells composed of PEDOT: PSS and n-Si structures were also examined. From the current density-voltage {J-V) measurement of a solar cell under illumination, the short circuit current (/sc), open circuit voltage (Voc), and conversion efficiency (17) were ∼19.7 mA/cm2, ∼ 578.5 mV, and ∼6.5%, respectively. The simple and low-cost fabrication process of the PEDOT: PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.

AB - We demonstrate locally contacted PEDOT: PSS Schottky diodes with excellent rectifying behavior, fabricated on n-type Si substrates using a spin-coating process and a reactive-ion etching process. Electrical transport characterizations of these Schottky diodes were investigated by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. We found that these devices exhibit excellent modulation in the current with an on/off ratio of ∼106. Schottky junction solar cells composed of PEDOT: PSS and n-Si structures were also examined. From the current density-voltage {J-V) measurement of a solar cell under illumination, the short circuit current (/sc), open circuit voltage (Voc), and conversion efficiency (17) were ∼19.7 mA/cm2, ∼ 578.5 mV, and ∼6.5%, respectively. The simple and low-cost fabrication process of the PEDOT: PSS/n-Si Schottky junctions makes them a promising candidate for further high performance solar cell applications.

KW - Capacitance-voltage measurement

KW - Conversion efficiency

KW - Current-voltage measurement

KW - Pedot: PSS

KW - Schottky diodes

UR - https://www.scopus.com/pages/publications/84899722242

U2 - 10.1166/jnn.2014.7937

DO - 10.1166/jnn.2014.7937

M3 - Journal article

C2 - 24738402

AN - SCOPUS:84899722242

SN - 1533-4880

VL - 14

SP - 4394

EP - 4399

JO - Journal of nanoscience and nanotechnology

JF - Journal of nanoscience and nanotechnology

IS - 6

ER -

Electrical transport characterization of PEDOT: PSS/n-Si schottky diodes and their applications in solar cells

Abstract

UN SDGs

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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