Electrical transport properties of VO2 nanowire field effect transistors

Jongsun Maeng; Gunho Jo; Tak Wook Kim; Takhee Lee

doi:10.1109/NMDC.2006.4388824

Electrical transport properties of VO₂ nanowire field effect transistors

Jongsun Maeng
, Gunho Jo
, Tak Wook Kim
, Takhee Lee^*

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Gwangju Institute of Science and Technology

Research output: Contribution to conference › Conference paper › peer-review

Abstract

The VO₂ nanowires were grown on Si₃N₄/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO₂ nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO₂ nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	476-477
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388824
State	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006.10.22 → 2006.10.25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Conference

Conference	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06.10.22 → 06.10.25

Keywords

Catalyst free CVD
Nanowire
Transistor
Vanadium dioxide

Access to Document

10.1109/NMDC.2006.4388824

Cite this

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title = "Electrical transport properties of VO2 nanowire field effect transistors",

abstract = "The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.",

keywords = "Catalyst free CVD, Nanowire, Transistor, Vanadium dioxide",

author = "Jongsun Maeng and Gunho Jo and Kim, \{Tak Wook\} and Takhee Lee",

year = "2006",

doi = "10.1109/NMDC.2006.4388824",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "476--477",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

Maeng, J, Jo, G, Kim, TW & Lee, T 2006, Electrical transport properties of VO₂ nanowire field effect transistors. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388824, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 476-477, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06.10.22. https://doi.org/10.1109/NMDC.2006.4388824

TY - GEN

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AU - Maeng, Jongsun

AU - Jo, Gunho

AU - Kim, Tak Wook

AU - Lee, Takhee

PY - 2006

Y1 - 2006

N2 - The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.

AB - The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2 nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.

KW - Catalyst free CVD

KW - Nanowire

KW - Transistor

KW - Vanadium dioxide

UR - https://www.scopus.com/pages/publications/50249116672

U2 - 10.1109/NMDC.2006.4388824

DO - 10.1109/NMDC.2006.4388824

M3 - Conference paper

AN - SCOPUS:50249116672

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 476

EP - 477

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

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ER -