Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors

Michael H. MacDougal; Gye Mo Yang; Aaron E. Bond; Chao Kun Lin; Denis Tishinin; P. Daniel Dapkus

doi:10.1109/68.481100

Electrically-pumped vertical-cavity lasers with Al_xO_y-GaAs reflectors

Michael H. MacDougal^*
, Gye Mo Yang
, Aaron E. Bond
, Chao Kun Lin
, Denis Tishinin
, P. Daniel Dapkus

^*Corresponding author for this work

Department of Semiconductor Science and Technology

IEEE
University of Southern California

Research output: Contribution to journal › Journal article › peer-review

55 Scopus citations

Abstract

We have fabricated the first electrically-pumped vertical-cavity surface-emitting lasers (VCSEL's) which use oxide-based distributed Bragg reflectors (DBR's) on both sides of the gain region. They require a third the epitaxial growth time of VCSEL's with semiconductor DBR's. We obtain threshold currents as low as 160 μA in VCSEL's with an active area of 8 μm × 8 μm using a two quantum well InGaAs-GaAs active region. By etching away mirror pairs from the top reflector, quantum efficiencies as high as 61% are attained, while still maintaining a low threshold current of 290 μA.

Original language	English
Pages (from-to)	310-312
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	8
Issue number	3
DOIs	https://doi.org/10.1109/68.481100
State	Published - 1996.03

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title = "Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors",

abstract = "We have fabricated the first electrically-pumped vertical-cavity surface-emitting lasers (VCSEL's) which use oxide-based distributed Bragg reflectors (DBR's) on both sides of the gain region. They require a third the epitaxial growth time of VCSEL's with semiconductor DBR's. We obtain threshold currents as low as 160 μA in VCSEL's with an active area of 8 μm × 8 μm using a two quantum well InGaAs-GaAs active region. By etching away mirror pairs from the top reflector, quantum efficiencies as high as 61\% are attained, while still maintaining a low threshold current of 290 μA.",

author = "MacDougal, \{Michael H.\} and Yang, \{Gye Mo\} and Bond, \{Aaron E.\} and Lin, \{Chao Kun\} and Denis Tishinin and Dapkus, \{P. Daniel\}",

year = "1996",

month = mar,

doi = "10.1109/68.481100",

language = "English",

volume = "8",

pages = "310--312",

journal = "IEEE Photonics Technology Letters",

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T1 - Electrically-pumped vertical-cavity lasers with AlxOy-GaAs reflectors

AU - MacDougal, Michael H.

AU - Yang, Gye Mo

AU - Bond, Aaron E.

AU - Lin, Chao Kun

AU - Tishinin, Denis

AU - Dapkus, P. Daniel

PY - 1996/3

Y1 - 1996/3

N2 - We have fabricated the first electrically-pumped vertical-cavity surface-emitting lasers (VCSEL's) which use oxide-based distributed Bragg reflectors (DBR's) on both sides of the gain region. They require a third the epitaxial growth time of VCSEL's with semiconductor DBR's. We obtain threshold currents as low as 160 μA in VCSEL's with an active area of 8 μm × 8 μm using a two quantum well InGaAs-GaAs active region. By etching away mirror pairs from the top reflector, quantum efficiencies as high as 61% are attained, while still maintaining a low threshold current of 290 μA.

AB - We have fabricated the first electrically-pumped vertical-cavity surface-emitting lasers (VCSEL's) which use oxide-based distributed Bragg reflectors (DBR's) on both sides of the gain region. They require a third the epitaxial growth time of VCSEL's with semiconductor DBR's. We obtain threshold currents as low as 160 μA in VCSEL's with an active area of 8 μm × 8 μm using a two quantum well InGaAs-GaAs active region. By etching away mirror pairs from the top reflector, quantum efficiencies as high as 61% are attained, while still maintaining a low threshold current of 290 μA.

UR - https://www.scopus.com/pages/publications/0030107958

U2 - 10.1109/68.481100

DO - 10.1109/68.481100

M3 - Journal article

AN - SCOPUS:0030107958

SN - 1041-1135

VL - 8

SP - 310

EP - 312

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 3

ER -

Electrically-pumped vertical-cavity lasers with Al_xO_y-GaAs reflectors

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