Abstract
The electroluminescence (EL) spectra of InAs quantum dot (QD) lasers with the InAlGaAs-InAlAs-InP (001) material system were examined by increasing the injection current above the threshold in the pulsed mode. The lasing emissions of the QD lasers with a cavity length of 1 mm showed multi-modes around 1.61 μm under pulsed operation. Those modes were attributed to the inhomogeneously-broadened gain spectra resulting from the presence of non-interacting QDs with different sizes. The carrier behavior between the subsets of the non-interacting QDs in the lasers was also examined by observing the EL spectra as a function of temperature under continuous-wave conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 1877-1880 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 52 |
| Issue number | 6 |
| DOIs | |
| State | Published - 2008.06 |
Keywords
- Electroluminescence
- Inhomogeneity
- Quantum dot
Quacquarelli Symonds(QS) Subject Topics
- Physics & Astronomy
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