Electroluminescence of n-Ge/i-Ge/p-Si hetero junction PIN LEDs

A pin LED was fabricated from the n-Ge/i-Ge/p-Si hetero junction structure grown by using RTCVD. The structural properties of the n-Ge/i-Ge/p-Si hetero junction structure were investigated using high-resolution X-ray diffraction (HRXRD). Specifically, the recent advances in the dry etching of n-Ge/i-Ge/p-Si hetero junction structure have been used to define pin LED n-Ge/i-Ge layer mesas. I-V characteristics of the pin LED indicate a reasonable reverse saturation current of 140 μA at -1V. The roll-off in electroluminescence spectra after wavelength of 1700 nm is expected due to the decreased emission of n-Ge/i-Ge/p-Si pin LED at room temperature.