Electromigration-induced failure of GaN multi-quantum well light emitting diode

Hyunsoo Kim; Hyundoek Yang; Chul Huh; Sang Woo Kim; Seong Ju Park; Hyunsang Hwang

doi:10.1049/el:20000657

Electromigration-induced failure of GaN multi-quantum well light emitting diode

Hyunsoo Kim
, Hyundoek Yang
, Chul Huh
, Sang Woo Kim
, Seong Ju Park
, Hyunsang Hwang

Department of Semiconductor Science and Technology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Journal article › peer-review

46 Scopus citations

Abstract

The reliability characteristics of a multiple-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities were investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation t_f = C/Iⁿ. Given the significant change in the value of n as a function of the stress current density due to the joule-heating, the stress current must be reduced to accurately estimate the device lifetime at operating current conditions.

Original language	English
Pages (from-to)	908-910
Number of pages	3
Journal	Electronics Letters
Volume	36
Issue number	10
DOIs	https://doi.org/10.1049/el:20000657
State	Published - 2000.05.11

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@article{771f5f236c7d4c55839fcbcfd876de18,

title = "Electromigration-induced failure of GaN multi-quantum well light emitting diode",

abstract = "The reliability characteristics of a multiple-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities were investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation tf = C/In. Given the significant change in the value of n as a function of the stress current density due to the joule-heating, the stress current must be reduced to accurately estimate the device lifetime at operating current conditions.",

author = "Hyunsoo Kim and Hyundoek Yang and Chul Huh and Kim, \{Sang Woo\} and Park, \{Seong Ju\} and Hyunsang Hwang",

year = "2000",

month = may,

day = "11",

doi = "10.1049/el:20000657",

language = "English",

volume = "36",

pages = "908--910",

journal = "Electronics Letters",

issn = "0013-5194",

number = "10",

}

TY - JOUR

T1 - Electromigration-induced failure of GaN multi-quantum well light emitting diode

AU - Kim, Hyunsoo

AU - Yang, Hyundoek

AU - Huh, Chul

AU - Kim, Sang Woo

AU - Park, Seong Ju

AU - Hwang, Hyunsang

PY - 2000/5/11

Y1 - 2000/5/11

N2 - The reliability characteristics of a multiple-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities were investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation tf = C/In. Given the significant change in the value of n as a function of the stress current density due to the joule-heating, the stress current must be reduced to accurately estimate the device lifetime at operating current conditions.

AB - The reliability characteristics of a multiple-quantum well (MQW) GaN/InGaN light emitting diode (LED) under various stress current densities were investigated. Based on the contact electromigration failure model of a silicon device, the lifetime of the LED device under normal operating current condition can be obtained from the relation tf = C/In. Given the significant change in the value of n as a function of the stress current density due to the joule-heating, the stress current must be reduced to accurately estimate the device lifetime at operating current conditions.

UR - https://www.scopus.com/pages/publications/0033732602

U2 - 10.1049/el:20000657

DO - 10.1049/el:20000657

M3 - Journal article

AN - SCOPUS:0033732602

SN - 0013-5194

VL - 36

SP - 908

EP - 910

JO - Electronics Letters

JF - Electronics Letters

IS - 10

ER -

Electromigration-induced failure of GaN multi-quantum well light emitting diode

Abstract

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