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Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films

  • S. Patnaik*
  • , L. D. Cooley
  • , A. Gurevich
  • , A. A. Polyanskii
  • , J. Jiang
  • , X. Y. Cai
  • , A. A. Squitieri
  • , M. T. Naus
  • , M. K. Lee
  • , J. H. Choi
  • , L. Belenky
  • , S. D. Bu
  • , J. Letteri
  • , X. Song
  • , D. G. Schlom
  • , S. E. Babcock
  • , C. B. Eom
  • , E. E. Hellstrom
  • , D. C. Larbalestier
  • *Corresponding author for this work
  • University of Wisconsin-Madison
  • Pennsylvania State University

Research output: Contribution to journalJournal articlepeer-review

Abstract

An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2/Hc2 is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at Hl* ≈ 0.8Hc2(T) in untextured samples. Hc2(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.

Original languageEnglish
Pages (from-to)315-319
Number of pages5
JournalSuperconductor Science and Technology
Volume14
Issue number6
DOIs
StatePublished - 2001.06

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