Electronic properties of self-assembled CdTe quantum wires grown on ZnTe buffer layers

S. H. Song; J. T. Woo; J. H. Kim; I. Lee; T. W. Kim; H. S. Lee; H. L. Park

doi:10.3938/jkps.50.793

Electronic properties of self-assembled CdTe quantum wires grown on ZnTe buffer layers

S. H. Song^*
, J. T. Woo
, J. H. Kim
, I. Lee
, T. W. Kim
, H. S. Lee
, H. L. Park

^*Corresponding author for this work

Department of Physics

Hanyang University
Yonsei University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

The photoluminescence (PL) spectra at several temperatures of self-assembled CdTe/ZnTe quantum wires (QWRs) grown by using molecular-beam epitaxy and atomic layer epitaxy showed that the PL peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E₁-HH₁) shifted to lower energy with increasing temperature. The electronic subband energies were calculated by using a variable-sized meshing finite difference method (FDM). The experimental (E₁-HH₁) transitions calculated by using the FDM taking into account strain effects are in reasonable agreement with the calculated (E₁-HH₁) transitions. The present results could help improve understanding of the electronic properties of the CdTe/ZnTe QWRs.

Original language	English
Pages (from-to)	793-796
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.793
State	Published - 2007.03

Keywords

CdTe/ZnTe quantum wires
Electronic properties
Interband transitions

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10.3938/jkps.50.793

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title = "Electronic properties of self-assembled CdTe quantum wires grown on ZnTe buffer layers",

abstract = "The photoluminescence (PL) spectra at several temperatures of self-assembled CdTe/ZnTe quantum wires (QWRs) grown by using molecular-beam epitaxy and atomic layer epitaxy showed that the PL peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E1-HH1) shifted to lower energy with increasing temperature. The electronic subband energies were calculated by using a variable-sized meshing finite difference method (FDM). The experimental (E1-HH1) transitions calculated by using the FDM taking into account strain effects are in reasonable agreement with the calculated (E1-HH1) transitions. The present results could help improve understanding of the electronic properties of the CdTe/ZnTe QWRs.",

keywords = "CdTe/ZnTe quantum wires, Electronic properties, Interband transitions",

author = "Song, \{S. H.\} and Woo, \{J. T.\} and Kim, \{J. H.\} and I. Lee and Kim, \{T. W.\} and Lee, \{H. S.\} and Park, \{H. L.\}",

year = "2007",

month = mar,

doi = "10.3938/jkps.50.793",

language = "English",

volume = "50",

pages = "793--796",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

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}

TY - JOUR

T1 - Electronic properties of self-assembled CdTe quantum wires grown on ZnTe buffer layers

AU - Song, S. H.

AU - Woo, J. T.

AU - Kim, J. H.

AU - Lee, I.

AU - Kim, T. W.

AU - Lee, H. S.

AU - Park, H. L.

PY - 2007/3

Y1 - 2007/3

N2 - The photoluminescence (PL) spectra at several temperatures of self-assembled CdTe/ZnTe quantum wires (QWRs) grown by using molecular-beam epitaxy and atomic layer epitaxy showed that the PL peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E1-HH1) shifted to lower energy with increasing temperature. The electronic subband energies were calculated by using a variable-sized meshing finite difference method (FDM). The experimental (E1-HH1) transitions calculated by using the FDM taking into account strain effects are in reasonable agreement with the calculated (E1-HH1) transitions. The present results could help improve understanding of the electronic properties of the CdTe/ZnTe QWRs.

AB - The photoluminescence (PL) spectra at several temperatures of self-assembled CdTe/ZnTe quantum wires (QWRs) grown by using molecular-beam epitaxy and atomic layer epitaxy showed that the PL peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole band (E1-HH1) shifted to lower energy with increasing temperature. The electronic subband energies were calculated by using a variable-sized meshing finite difference method (FDM). The experimental (E1-HH1) transitions calculated by using the FDM taking into account strain effects are in reasonable agreement with the calculated (E1-HH1) transitions. The present results could help improve understanding of the electronic properties of the CdTe/ZnTe QWRs.

KW - CdTe/ZnTe quantum wires

KW - Electronic properties

KW - Interband transitions

UR - https://www.scopus.com/pages/publications/34147109754

U2 - 10.3938/jkps.50.793

DO - 10.3938/jkps.50.793

M3 - Journal article

AN - SCOPUS:34147109754

SN - 0374-4884

VL - 50

SP - 793

EP - 796

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Electronic properties of self-assembled CdTe quantum wires grown on ZnTe buffer layers

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Keywords

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