Electronic transport in indium oxide nanowire field effect transistors

Gunho Jo; Jongsun Maeng; Woong Ki Hong; Tae Wook Kim; Takhee Lee

doi:10.1109/NMDC.2006.4388833

Electronic transport in indium oxide nanowire field effect transistors

Gunho Jo^*
, Jongsun Maeng
, Woong Ki Hong
, Tae Wook Kim
, Takhee Lee

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Gwangju Institute of Science and Technology

Research output: Contribution to conference › Conference paper › peer-review

Abstract

High-quality single-crystal indium oxide (In₂O₃) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized In₂O₃ NWs are non-stoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic study. The In ₂O₃ NW field effect transistors show the n-type behavior due to these oxygen vacancies.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	494-495
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388833
State	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006.10.22 → 2006.10.25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Conference

Conference	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06.10.22 → 06.10.25

Keywords

Indium oxide
Nanotechnology
Nanowires
Transistor

Access to Document

10.1109/NMDC.2006.4388833

Cite this

@inproceedings{2508bc138fa041c3bfb47b303de2809e,

title = "Electronic transport in indium oxide nanowire field effect transistors",

abstract = "High-quality single-crystal indium oxide (In2O3) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized In2O3 NWs are non-stoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic study. The In 2O3 NW field effect transistors show the n-type behavior due to these oxygen vacancies.",

keywords = "Indium oxide, Nanotechnology, Nanowires, Transistor",

author = "Gunho Jo and Jongsun Maeng and Hong, \{Woong Ki\} and Kim, \{Tae Wook\} and Takhee Lee",

year = "2006",

doi = "10.1109/NMDC.2006.4388833",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "494--495",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

Jo, G, Maeng, J, Hong, WK, Kim, TW & Lee, T 2006, Electronic transport in indium oxide nanowire field effect transistors. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388833, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 494-495, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06.10.22. https://doi.org/10.1109/NMDC.2006.4388833

TY - GEN

T1 - Electronic transport in indium oxide nanowire field effect transistors

AU - Jo, Gunho

AU - Maeng, Jongsun

AU - Hong, Woong Ki

AU - Kim, Tae Wook

AU - Lee, Takhee

PY - 2006

Y1 - 2006

N2 - High-quality single-crystal indium oxide (In2O3) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized In2O3 NWs are non-stoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic study. The In 2O3 NW field effect transistors show the n-type behavior due to these oxygen vacancies.

AB - High-quality single-crystal indium oxide (In2O3) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized In2O3 NWs are non-stoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic study. The In 2O3 NW field effect transistors show the n-type behavior due to these oxygen vacancies.

KW - Indium oxide

KW - Nanotechnology

KW - Nanowires

KW - Transistor

UR - https://www.scopus.com/pages/publications/50249101581

U2 - 10.1109/NMDC.2006.4388833

DO - 10.1109/NMDC.2006.4388833

M3 - Conference paper

AN - SCOPUS:50249101581

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 494

EP - 495

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -

Electronic transport in indium oxide nanowire field effect transistors

Abstract

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Keywords

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