Electrophoretic deposition of CdZnS-ZnS QDs on InGaN/GaN MQW pillar structure

Sudarsan Raj; Taek Soo Jang; Woo Min Lee; Sang Yeob Oh; Cheul Ro Lee; Masakuni Ozawa; Yeon Tae Yu

doi:10.1016/j.spmi.2016.11.001

Electrophoretic deposition of CdZnS-ZnS QDs on InGaN/GaN MQW pillar structure

Sudarsan Raj
, Taek Soo Jang
, Woo Min Lee
, Sang Yeob Oh
, Cheul Ro Lee
, Masakuni Ozawa
, Yeon Tae Yu^*

^*Corresponding author for this work

Information Materials Engineering

Research output: Contribution to journal › Journal article › peer-review

3 Scopus citations

Abstract

In this study, CdZnS-ZnS quantum dots (QDs) films were fabricated on InGaN/GaN multi-quantum well (MQW) pillar structure by electrophoretic deposition demonstrated for the first time. The as synthesized QDs have particle size 5–8 nm and emission peak at 425 nm. The QDs are loaded both on the top as well as on the side wall of the InGaN/GaN MQW pillar structure. It showed a uniform coating having gradually increased in photoluminescence emission peak with increasing deposition times.

Original language	English
Pages (from-to)	1193-1197
Number of pages	5
Journal	Superlattices and Microstructures
Volume	100
DOIs	https://doi.org/10.1016/j.spmi.2016.11.001
State	Published - 2016.12.1

Keywords

CdZnS-ZnS QDs
EPD
InGaN/GaN MQW
Pillar structure

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Physics & Astronomy

Access to Document

10.1016/j.spmi.2016.11.001

Cite this

@article{4983b29f63824590bfe0ef5494de9ed8,

title = "Electrophoretic deposition of CdZnS-ZnS QDs on InGaN/GaN MQW pillar structure",

abstract = "In this study, CdZnS-ZnS quantum dots (QDs) films were fabricated on InGaN/GaN multi-quantum well (MQW) pillar structure by electrophoretic deposition demonstrated for the first time. The as synthesized QDs have particle size 5–8 nm and emission peak at 425 nm. The QDs are loaded both on the top as well as on the side wall of the InGaN/GaN MQW pillar structure. It showed a uniform coating having gradually increased in photoluminescence emission peak with increasing deposition times.",

keywords = "CdZnS-ZnS QDs, EPD, InGaN/GaN MQW, Pillar structure",

author = "Sudarsan Raj and Jang, \{Taek Soo\} and Lee, \{Woo Min\} and Oh, \{Sang Yeob\} and Lee, \{Cheul Ro\} and Masakuni Ozawa and Yu, \{Yeon Tae\}",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd",

year = "2016",

month = dec,

day = "1",

doi = "10.1016/j.spmi.2016.11.001",

language = "English",

volume = "100",

pages = "1193--1197",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

}

TY - JOUR

T1 - Electrophoretic deposition of CdZnS-ZnS QDs on InGaN/GaN MQW pillar structure

AU - Raj, Sudarsan

AU - Jang, Taek Soo

AU - Lee, Woo Min

AU - Oh, Sang Yeob

AU - Lee, Cheul Ro

AU - Ozawa, Masakuni

AU - Yu, Yeon Tae

PY - 2016/12/1

Y1 - 2016/12/1

N2 - In this study, CdZnS-ZnS quantum dots (QDs) films were fabricated on InGaN/GaN multi-quantum well (MQW) pillar structure by electrophoretic deposition demonstrated for the first time. The as synthesized QDs have particle size 5–8 nm and emission peak at 425 nm. The QDs are loaded both on the top as well as on the side wall of the InGaN/GaN MQW pillar structure. It showed a uniform coating having gradually increased in photoluminescence emission peak with increasing deposition times.

AB - In this study, CdZnS-ZnS quantum dots (QDs) films were fabricated on InGaN/GaN multi-quantum well (MQW) pillar structure by electrophoretic deposition demonstrated for the first time. The as synthesized QDs have particle size 5–8 nm and emission peak at 425 nm. The QDs are loaded both on the top as well as on the side wall of the InGaN/GaN MQW pillar structure. It showed a uniform coating having gradually increased in photoluminescence emission peak with increasing deposition times.

KW - CdZnS-ZnS QDs

KW - EPD

KW - InGaN/GaN MQW

KW - Pillar structure

UR - https://www.scopus.com/pages/publications/85006324380

U2 - 10.1016/j.spmi.2016.11.001

DO - 10.1016/j.spmi.2016.11.001

M3 - Journal article

AN - SCOPUS:85006324380

SN - 0749-6036

VL - 100

SP - 1193

EP - 1197

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Electrophoretic deposition of CdZnS-ZnS QDs on InGaN/GaN MQW pillar structure

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Cite this