Electrostatic Discharge Characteristics of InGaN/GaN Light-Emitting Diodes with Si-Doped Graded Superlattice

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Journal of nanoscience and nanotechnology
State	Published - 2015.10.1

Cite this

@article{3050296475ae47ea83037b8d9d5093d1,

title = "Electrostatic Discharge Characteristics of InGaN/GaN Light-Emitting Diodes with Si-Doped Graded Superlattice",

author = "Kim, \{Jin Soo\} and Cheul-Ro Lee",

year = "2015",

month = oct,

day = "1",

language = "Korean",

journal = "Journal of nanoscience and nanotechnology",

issn = "1533-4880",

}