Abstract
Graphene nanoribbon, which is the one-dimensional form of graphene, is an attractive nano structure for next generation electronic devices. Herein, we studied the electronic properties of pseudo-GNRs in large-scale graphene sheets grown on Ge(110) using low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). Based on our STM results, the pseudo-GNRs are aligned in the <112> direction of the Ge surface; the alignment of the pseudo-GNRs is controlled by the surface reconstruction of Ge(110) substrate, which can be an important merit in terms of the mass fabrication. Bandgap energies ranging from ∼0.12 to ∼0.3 eV were measured via STS on pseudo-GNRs in graphene/Ge(110), while the surrounding graphene area outside the pseudo-GNR growth region shows the typical electronic structure of graphene, verifying the spontaneous formation of metallic-semiconducting-metallic junction nanostructure. This study unveils the geometric and electronic properties of pseudo-GNRs in graphene/Ge(110), providing essential information for the realization of next-generation nanoelectronic devices.
| Original language | English |
|---|---|
| Article number | 115531 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 146 |
| DOIs | |
| State | Published - 2023.01 |
Keywords
- Graphene on Ge(110)
- Pseudo graphene nanoribbon
- Scanning tunneling microscopy (STM)
- Scanning tunneling spectroscopy (STS)
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Physics & Astronomy
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