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Engineering design guide for etch holes to compensate spring width loss for reliable resonant frequencies

  • Yun Ho Jang
  • , Jong Wan Kim
  • , Jung Mu Kim
  • , Yong Kweon Kim*
  • *Corresponding author for this work
  • Seoul National University

Research output: Contribution to conferenceConference paperpeer-review

Abstract

This paper describes design guidance for a compensation method of spring width loss during silicon deep RIE (reactive ion etch) process. We found that a compensation factor (CF), defined by circumference (C) of unit etch hole divided by its area (A), is directly related to the variation of resonant frequencies of silicon MEMS resonators. We proposed 5 models with different etch hole shapes and investigated the effect of etch holes on resonant frequencies. The model with proposed etch holes showed three fold smaller variation of resonant frequencies than other models with conventional etch holes.

Original languageEnglish
Title of host publication2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Pages424-427
Number of pages4
DOIs
StatePublished - 2012
Event2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012 - Paris, France
Duration: 2012.01.292012.02.2

Publication series

NameProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN (Print)1084-6999

Conference

Conference2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Country/TerritoryFrance
CityParis
Period12.01.2912.02.2

Quacquarelli Symonds(QS) Subject Topics

  • Materials Science
  • Engineering - Mechanical
  • Engineering - Electrical & Electronic
  • Engineering - Petroleum
  • Physics & Astronomy

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