Abstract
A GaN waveguide structure with micro-pillar arrays is designed and fabricated to measure the extraction of optical modes that would be waveguided in the absence of the pillars. Electroluminescence (EL) measurements of waveguide light-emitting diodes (LEDs) with pillar diameters in the 2-10 μm range revealed increasing light-extraction efficiency (LEE) enhancement with decreasing pillar diameter. Ray tracing simulations of LED far-field patterns confirmed experimental trends. A 54% enhancement is demonstrated for GaN waveguides cladded with a triangular lattice of graded-refractive-index (GRIN) TiO2-SiO2 micro-pillars of 2 μm diameters compared to GaN waveguides cladded with an unpatterned GRIN TiO2-SiO2 layer.
| Original language | English |
|---|---|
| Pages (from-to) | 2277-2280 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 209 |
| Issue number | 11 |
| DOIs | |
| State | Published - 2012.11 |
Keywords
- GaN
- GRIN
- light-extraction
- micro-pillars
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