Enhanced light extraction of GaN-based light emitting diodes fabricated with deeply etched mesa holes

Hyunsoo Kim; Kwang Soon Ahn

doi:10.1149/1.3294967

Enhanced light extraction of GaN-based light emitting diodes fabricated with deeply etched mesa holes

Hyunsoo Kim^*
, Kwang Soon Ahn

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Yeungnam University

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

We report on the enhanced light extraction of GaN-based light emitting diodes (LEDs) fabricated with deeply etched mesa holes. To maximize the extraction of trapped light, the geometry of mesa holes, which act as lateral exits in guided mode, could be optimized based on Snell's law. The LED fabricated with deeply etched mesa holes showed 27% enhancement in output power when compared to a reference LED. This result agreed with optical ray-tracing calculations.

Original language	English
Pages (from-to)	H131-H133
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	4
DOIs	https://doi.org/10.1149/1.3294967
State	Published - 2010

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum
Engineering - Chemical
Chemistry

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@article{a0601d54bca74ea7ac2ec5e73e07ff1a,

title = "Enhanced light extraction of GaN-based light emitting diodes fabricated with deeply etched mesa holes",

abstract = "We report on the enhanced light extraction of GaN-based light emitting diodes (LEDs) fabricated with deeply etched mesa holes. To maximize the extraction of trapped light, the geometry of mesa holes, which act as lateral exits in guided mode, could be optimized based on Snell's law. The LED fabricated with deeply etched mesa holes showed 27\% enhancement in output power when compared to a reference LED. This result agreed with optical ray-tracing calculations.",

author = "Hyunsoo Kim and Ahn, \{Kwang Soon\}",

year = "2010",

doi = "10.1149/1.3294967",

language = "English",

volume = "13",

pages = "H131--H133",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

number = "4",

}

TY - JOUR

T1 - Enhanced light extraction of GaN-based light emitting diodes fabricated with deeply etched mesa holes

AU - Kim, Hyunsoo

AU - Ahn, Kwang Soon

PY - 2010

Y1 - 2010

N2 - We report on the enhanced light extraction of GaN-based light emitting diodes (LEDs) fabricated with deeply etched mesa holes. To maximize the extraction of trapped light, the geometry of mesa holes, which act as lateral exits in guided mode, could be optimized based on Snell's law. The LED fabricated with deeply etched mesa holes showed 27% enhancement in output power when compared to a reference LED. This result agreed with optical ray-tracing calculations.

AB - We report on the enhanced light extraction of GaN-based light emitting diodes (LEDs) fabricated with deeply etched mesa holes. To maximize the extraction of trapped light, the geometry of mesa holes, which act as lateral exits in guided mode, could be optimized based on Snell's law. The LED fabricated with deeply etched mesa holes showed 27% enhancement in output power when compared to a reference LED. This result agreed with optical ray-tracing calculations.

UR - https://www.scopus.com/pages/publications/76749139045

U2 - 10.1149/1.3294967

DO - 10.1149/1.3294967

M3 - Journal article

AN - SCOPUS:76749139045

SN - 1099-0062

VL - 13

SP - H131-H133

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 4

ER -

Enhanced light extraction of GaN-based light emitting diodes fabricated with deeply etched mesa holes

Abstract

Quacquarelli Symonds(QS) Subject Topics

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