Enhanced Light Output of GaN-Based Light-Emitting Diodes by Using Omnidirectional Sidewall Reflectors

Hyunsoo Kim; Kwang Hyeon Baik; Jaehee Cho; Kyoung Kook Kim; Sung Nam Lee; Cheolsoo Sone; Yongjo Park

doi:10.1109/LPT.2007.904325

Enhanced Light Output of GaN-Based Light-Emitting Diodes by Using Omnidirectional Sidewall Reflectors

Hyunsoo Kim
, Kwang Hyeon Baik
, Jaehee Cho
, Kyoung Kook Kim
, Sung Nam Lee
, Cheolsoo Sone
, Yongjo Park

Department of Semiconductor Science and Technology

Samsung
Korea University

Research output: Contribution to journal › Journal article › peer-review

11 Scopus citations

Abstract

We report on the enhancement of light output in GaN-based light-emitting diodes (LEDs) by using omnidirectional side-wall reflectors. Optical ray-tracing simulation results show that the light extraction efficiency of LEDs can vary in the range of 15.0%-24.4%, depending on the mesa depth, reflectivity, and profile angle of mesa sidewalls. Based on these findings, LEDs are fabricated with SiO₂-Al omnidirectional sidewall reflectors (at a mesa depth of 1.6 μm and a sidewall profile-angle of 42°). The LEDs show an enhancement of the light output by 18%, as compared with reference LEDs.

Original language	English
Pages (from-to)	1562-1564
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	19
Issue number	19
DOIs	https://doi.org/10.1109/LPT.2007.904325
State	Published - 2007.10.1

Keywords

GaN light-emitting diode (LED)
reflector
side-wall

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10.1109/LPT.2007.904325

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title = "Enhanced Light Output of GaN-Based Light-Emitting Diodes by Using Omnidirectional Sidewall Reflectors",

abstract = "We report on the enhancement of light output in GaN-based light-emitting diodes (LEDs) by using omnidirectional side-wall reflectors. Optical ray-tracing simulation results show that the light extraction efficiency of LEDs can vary in the range of 15.0\%-24.4\%, depending on the mesa depth, reflectivity, and profile angle of mesa sidewalls. Based on these findings, LEDs are fabricated with SiO2-Al omnidirectional sidewall reflectors (at a mesa depth of 1.6 μm and a sidewall profile-angle of 42°). The LEDs show an enhancement of the light output by 18\%, as compared with reference LEDs.",

keywords = "GaN light-emitting diode (LED), reflector, side-wall",

author = "Hyunsoo Kim and Baik, \{Kwang Hyeon\} and Jaehee Cho and Kim, \{Kyoung Kook\} and Lee, \{Sung Nam\} and Cheolsoo Sone and Yongjo Park",

year = "2007",

month = oct,

day = "1",

doi = "10.1109/LPT.2007.904325",

language = "English",

volume = "19",

pages = "1562--1564",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "19",

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TY - JOUR

T1 - Enhanced Light Output of GaN-Based Light-Emitting Diodes by Using Omnidirectional Sidewall Reflectors

AU - Kim, Hyunsoo

AU - Baik, Kwang Hyeon

AU - Cho, Jaehee

AU - Kim, Kyoung Kook

AU - Lee, Sung Nam

AU - Sone, Cheolsoo

AU - Park, Yongjo

PY - 2007/10/1

Y1 - 2007/10/1

N2 - We report on the enhancement of light output in GaN-based light-emitting diodes (LEDs) by using omnidirectional side-wall reflectors. Optical ray-tracing simulation results show that the light extraction efficiency of LEDs can vary in the range of 15.0%-24.4%, depending on the mesa depth, reflectivity, and profile angle of mesa sidewalls. Based on these findings, LEDs are fabricated with SiO2-Al omnidirectional sidewall reflectors (at a mesa depth of 1.6 μm and a sidewall profile-angle of 42°). The LEDs show an enhancement of the light output by 18%, as compared with reference LEDs.

AB - We report on the enhancement of light output in GaN-based light-emitting diodes (LEDs) by using omnidirectional side-wall reflectors. Optical ray-tracing simulation results show that the light extraction efficiency of LEDs can vary in the range of 15.0%-24.4%, depending on the mesa depth, reflectivity, and profile angle of mesa sidewalls. Based on these findings, LEDs are fabricated with SiO2-Al omnidirectional sidewall reflectors (at a mesa depth of 1.6 μm and a sidewall profile-angle of 42°). The LEDs show an enhancement of the light output by 18%, as compared with reference LEDs.

KW - GaN light-emitting diode (LED)

KW - reflector

KW - side-wall

UR - https://www.scopus.com/pages/publications/85008039152

U2 - 10.1109/LPT.2007.904325

DO - 10.1109/LPT.2007.904325

M3 - Journal article

AN - SCOPUS:85008039152

SN - 1041-1135

VL - 19

SP - 1562

EP - 1564

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

ER -

Enhanced Light Output of GaN-Based Light-Emitting Diodes by Using Omnidirectional Sidewall Reflectors

Abstract

Keywords

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