Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer

Jaehee Cho

Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer

Jaehee Cho

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Original language	Korean
Journal	Applied Physics Letters
State	Published - 2013.08.5

Cite this

@article{47be82bc0ce8433da7f30df6dccbc13d,

title = "Enhanced overall efficiency of GaInN-based light-emitting diodes with reduced efficiency droop by Al-composition-graded AlGaN/GaN superlattice electron blocking layer",

author = "Jaehee Cho",

year = "2013",

month = aug,

day = "5",

language = "Korean",

journal = "Applied Physics Letters",

issn = "0003-6951",

}