Enhanced performance of Si nanocrystal LEDs by using NiAg /indium tin oxide contact

Chul Huh; Jae Heon Shin; Kyung Hyun Kim; Chel Jong Choi; Kwan Sik Cho; Jongcheol Hong; Gun Yong Sung

doi:10.1149/1.2363925

Enhanced performance of Si nanocrystal LEDs by using NiAg /indium tin oxide contact

Chul Huh^*
, Jae Heon Shin
, Kyung Hyun Kim
, Chel Jong Choi
, Kwan Sik Cho
, Jongcheol Hong
, Gun Yong Sung

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

Abstract

We have investigated the NiAg /indium tin oxide (ITO) contacts to n-SiC films for silicon-nanocrystal (nc-Si) light-emitting diodes (LEDs). The electrical properties of the nc-Si LED with a thin NiAg interlayer was improved compared to that of the nc-Si LED without one. This was attributed to a decrease in the contact resistance due to the interfacial reaction at the contact region, which was confirmed by Auger depth profiles and high-resolution transmission electron microscope analyses. In addition, the light output power at a current of 20 mA was also enhanced by around 35%. This result strongly indicates that the NiAgITO contact can serve as a highly promising contact scheme to enhance the efficiency of the nc-Si LEDs.

Original language	English
Article number	001701ESL
Pages (from-to)	J9-J11
Journal	Electrochemical and Solid-State Letters
Volume	10
Issue number	1
DOIs	https://doi.org/10.1149/1.2363925
State	Published - 2007

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10.1149/1.2363925

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title = "Enhanced performance of Si nanocrystal LEDs by using NiAg /indium tin oxide contact",

abstract = "We have investigated the NiAg /indium tin oxide (ITO) contacts to n-SiC films for silicon-nanocrystal (nc-Si) light-emitting diodes (LEDs). The electrical properties of the nc-Si LED with a thin NiAg interlayer was improved compared to that of the nc-Si LED without one. This was attributed to a decrease in the contact resistance due to the interfacial reaction at the contact region, which was confirmed by Auger depth profiles and high-resolution transmission electron microscope analyses. In addition, the light output power at a current of 20 mA was also enhanced by around 35\%. This result strongly indicates that the NiAgITO contact can serve as a highly promising contact scheme to enhance the efficiency of the nc-Si LEDs.",

author = "Chul Huh and Shin, \{Jae Heon\} and Kim, \{Kyung Hyun\} and Choi, \{Chel Jong\} and Cho, \{Kwan Sik\} and Jongcheol Hong and Sung, \{Gun Yong\}",

year = "2007",

doi = "10.1149/1.2363925",

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journal = "Electrochemical and Solid-State Letters",

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TY - JOUR

T1 - Enhanced performance of Si nanocrystal LEDs by using NiAg /indium tin oxide contact

AU - Huh, Chul

AU - Shin, Jae Heon

AU - Kim, Kyung Hyun

AU - Choi, Chel Jong

AU - Cho, Kwan Sik

AU - Hong, Jongcheol

AU - Sung, Gun Yong

PY - 2007

Y1 - 2007

N2 - We have investigated the NiAg /indium tin oxide (ITO) contacts to n-SiC films for silicon-nanocrystal (nc-Si) light-emitting diodes (LEDs). The electrical properties of the nc-Si LED with a thin NiAg interlayer was improved compared to that of the nc-Si LED without one. This was attributed to a decrease in the contact resistance due to the interfacial reaction at the contact region, which was confirmed by Auger depth profiles and high-resolution transmission electron microscope analyses. In addition, the light output power at a current of 20 mA was also enhanced by around 35%. This result strongly indicates that the NiAgITO contact can serve as a highly promising contact scheme to enhance the efficiency of the nc-Si LEDs.

AB - We have investigated the NiAg /indium tin oxide (ITO) contacts to n-SiC films for silicon-nanocrystal (nc-Si) light-emitting diodes (LEDs). The electrical properties of the nc-Si LED with a thin NiAg interlayer was improved compared to that of the nc-Si LED without one. This was attributed to a decrease in the contact resistance due to the interfacial reaction at the contact region, which was confirmed by Auger depth profiles and high-resolution transmission electron microscope analyses. In addition, the light output power at a current of 20 mA was also enhanced by around 35%. This result strongly indicates that the NiAgITO contact can serve as a highly promising contact scheme to enhance the efficiency of the nc-Si LEDs.

UR - https://www.scopus.com/pages/publications/33845369126

U2 - 10.1149/1.2363925

DO - 10.1149/1.2363925

M3 - Journal article

AN - SCOPUS:33845369126

SN - 1099-0062

VL - 10

SP - J9-J11

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 1

M1 - 001701ESL

ER -

Enhanced performance of Si nanocrystal LEDs by using NiAg /indium tin oxide contact

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