Abstract
An air-bridge thermophotovoltaic (TPV) cell can enable nearly complete utilization of out-of-band (OOB) photons. However, the air-bridge consists of a micron-thick free-standing semiconductor membrane that can buckle during fabrication. Such a buckled membrane supports multiple optical cavity modes in the air gap between the semiconductor and the bottom, metal back surface reflector, causing up to 10% loss in OOB reflectance (ROOB). Here we demonstrate a single cavity mode with an extremely flat In0.53Ga0.47As TPV membrane that exhibits ROOB = 98.9 ± 0.1% under 1279 K blackbody illumination. The remaining 1.1% reflectance loss is attributed to free carrier absorption and cavity oscillations. The flat TPV cell exhibits a spectral efficiency ranging from 68.6% to 76.5% for emitter temperatures between 900 and 1500 K, which exceeds that of previous reflective TPV cells, and represents a 20-30% improvement compared to the buckled cell, leading to a power conversion efficiency of 31.7 ± 0.1% at 1279 K.
| Original language | English |
|---|---|
| Pages (from-to) | 2935-2939 |
| Number of pages | 5 |
| Journal | ACS Energy Letters |
| Volume | 8 |
| Issue number | 7 |
| DOIs | |
| State | Published - 2023.07.14 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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