Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

Chul Huh; Bong Kyu Kim; Chang Geun Ahn; Chel Jong Choi; Sang Hyeob Kim

doi:10.1063/1.4890848

Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

Chul Huh^*
, Bong Kyu Kim
, Chang Geun Ahn
, Chel Jong Choi
, Sang Hyeob Kim

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

8 Scopus citations

Abstract

We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter < 50 nm) are compactly knitted and have a tendency to grow perpendicularly above the surface. The electrical characteristics of Si NC LED were significantly improved, which was attributed to an enhancement in the current spreading property due to densely interconnecting ITO NWs. In addition, light output power and wall-plug efficiency from the Si NC LED were enhanced by 45% and 38%, respectively. This was originated from an enhancement in the escape probability of the photons generated in the Si NCs due to multiple scatterings at the surface of ITO NWs acting as a light waveguide. We show here that the use of the ITO NWs can be very useful for realizing a highly efficient Si NC LED.

Original language	English
Article number	031108
Journal	Applied Physics Letters
Volume	105
Issue number	3
DOIs	https://doi.org/10.1063/1.4890848
State	Published - 2014.07.21

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

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@article{a373a3c6daa0450e86358ab58275e1bd,

title = "Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires",

abstract = "We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter < 50 nm) are compactly knitted and have a tendency to grow perpendicularly above the surface. The electrical characteristics of Si NC LED were significantly improved, which was attributed to an enhancement in the current spreading property due to densely interconnecting ITO NWs. In addition, light output power and wall-plug efficiency from the Si NC LED were enhanced by 45\% and 38\%, respectively. This was originated from an enhancement in the escape probability of the photons generated in the Si NCs due to multiple scatterings at the surface of ITO NWs acting as a light waveguide. We show here that the use of the ITO NWs can be very useful for realizing a highly efficient Si NC LED.",

author = "Chul Huh and Kim, \{Bong Kyu\} and Ahn, \{Chang Geun\} and Choi, \{Chel Jong\} and Kim, \{Sang Hyeob\}",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = jul,

day = "21",

doi = "10.1063/1.4890848",

language = "English",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "3",

}

TY - JOUR

T1 - Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

AU - Huh, Chul

AU - Kim, Bong Kyu

AU - Ahn, Chang Geun

AU - Choi, Chel Jong

AU - Kim, Sang Hyeob

PY - 2014/7/21

Y1 - 2014/7/21

N2 - We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter < 50 nm) are compactly knitted and have a tendency to grow perpendicularly above the surface. The electrical characteristics of Si NC LED were significantly improved, which was attributed to an enhancement in the current spreading property due to densely interconnecting ITO NWs. In addition, light output power and wall-plug efficiency from the Si NC LED were enhanced by 45% and 38%, respectively. This was originated from an enhancement in the escape probability of the photons generated in the Si NCs due to multiple scatterings at the surface of ITO NWs acting as a light waveguide. We show here that the use of the ITO NWs can be very useful for realizing a highly efficient Si NC LED.

AB - We report an enhancement in light emission and electrical efficiencies of a Si nanocrystal (NC) light-emitting diode (LED) by employing indium tin oxide (ITO) nanowires (NWs). The formed ITO NWs (diameter < 50 nm) are compactly knitted and have a tendency to grow perpendicularly above the surface. The electrical characteristics of Si NC LED were significantly improved, which was attributed to an enhancement in the current spreading property due to densely interconnecting ITO NWs. In addition, light output power and wall-plug efficiency from the Si NC LED were enhanced by 45% and 38%, respectively. This was originated from an enhancement in the escape probability of the photons generated in the Si NCs due to multiple scatterings at the surface of ITO NWs acting as a light waveguide. We show here that the use of the ITO NWs can be very useful for realizing a highly efficient Si NC LED.

UR - https://www.scopus.com/pages/publications/84925871229

U2 - 10.1063/1.4890848

DO - 10.1063/1.4890848

M3 - Journal article

AN - SCOPUS:84925871229

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 031108

ER -

Enhancement in light emission and electrical efficiencies of a silicon nanocrystal light-emitting diode by indium tin oxide nanowires

Abstract

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