Abstract
The light output power and wall-plug efficiency of the Si nanocrystal (nc-Si) light-emitting diode (LED) were significantly enhanced by employing the multiple-luminescent structures. This improvement was attributed to a strong confinement of carriers in the SiNx luminescent layers containing the nc-Si due to the band offset between the luminescent layer and barrier layer.
| Original language | English |
|---|---|
| Pages (from-to) | 5058-5062 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 22 |
| Issue number | 44 |
| DOIs | |
| State | Published - 2010.11.24 |
Keywords
- Electroluminescence
- Light-Emitting Diode
- Multiple-Luminescent Structure
- Silicon Nanocrystal
- Wall-Plug Efficiency
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Mechanical
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