Abstract
We investigated the optical properties of coupled CdTe quantum dots (QDs) and quantum well (QW) structures with ZnTe separation layers grown on Si substrates. The photoluminescence (PL) intensity of the QDs coupled with a QW increased with decreasing thickness of the ZnTe separation layer. The activation energy of electrons within the coupled structures, which was obtained from temperature-dependent PL spectra, increased with decreasing separation layer thickness. These behaviors were attributed to the tunneling of carriers from the QW to the QDs through a thin separation layer.
| Original language | English |
|---|---|
| Pages (from-to) | 10788-10791 |
| Number of pages | 4 |
| Journal | Journal of nanoscience and nanotechnology |
| Volume | 16 |
| Issue number | 10 |
| DOIs | |
| State | Published - 2016.10 |
Keywords
- Activation energy
- Cadmium telluride
- Coupled structures
- Quantum dots
- Quantum well
- Zinc telluride
Quacquarelli Symonds(QS) Subject Topics
- Materials Science
- Engineering - Chemical
- Chemistry
- Physics & Astronomy
- Biological Sciences
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