Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates

Hoon Ki Lee; V. Janardhanam; Jae Kyoung Mun; Tae Hoon Jang; Kyu Hwan Shim; Hyung Joong Yun; Jonghan Won; Chel Jong Choi

doi:10.1016/j.mssp.2025.109371

Enhancement of device performance in vertical Au/Ni/β-Ga₂O₃ Schottky barrier diodes using regularly aligned inner field plates

Hoon Ki Lee
, V. Janardhanam
, Jae Kyoung Mun
, Tae Hoon Jang
, Kyu Hwan Shim
, Hyung Joong Yun
, Jonghan Won^*
, Chel Jong Choi^*

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

4 Scopus citations

Abstract

In the present study, the device performance of vertical Au/Ni/β-Ga₂O₃ Schottky barrier diodes with regularly aligned inner field plates is investigated. The fabricated Schottky barrier diode with regularly aligned inner field plates achieved an improved breakdown voltage (V_BR) of 590 V, compared to the 500 V for the diode without field plates. However, the power figure-of-merit (FOM) of the diode with inner field plates was determined to be 31.9 MWcm⁻², which is lower than the FOM of 48.2 MWcm⁻² for that of the diode without field plates. The FOM is decreased in the former because of its increased turn-on resistance associated with decreasing effective device area caused by the array of SiO₂ field plates. A technology computer-aided design (TCAD) simulation reveals that the regularly aligned inner field plates are effective in suppressing the peak electric field distribution under the anode edges, which increases V_BR. The results of this work offer a simple and effective approach for reducing electric field crowding under anode edges to enhance the performance of Ga₂O₃-based power devices.

Original language	English
Article number	109371
Journal	Materials Science in Semiconductor Processing
Volume	191
DOIs	https://doi.org/10.1016/j.mssp.2025.109371
State	Published - 2025.06.1

Keywords

Computer simulations
Electrical transport
Electronic properties
Oxide materials
Semiconductors
Thin films

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Mechanical
Physics & Astronomy

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10.1016/j.mssp.2025.109371

Cite this

@article{4b231009992c468da1ecf5d47f023209,

title = "Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates",

abstract = "In the present study, the device performance of vertical Au/Ni/β-Ga2O3 Schottky barrier diodes with regularly aligned inner field plates is investigated. The fabricated Schottky barrier diode with regularly aligned inner field plates achieved an improved breakdown voltage (VBR) of 590 V, compared to the 500 V for the diode without field plates. However, the power figure-of-merit (FOM) of the diode with inner field plates was determined to be 31.9 MWcm−2, which is lower than the FOM of 48.2 MWcm−2 for that of the diode without field plates. The FOM is decreased in the former because of its increased turn-on resistance associated with decreasing effective device area caused by the array of SiO2 field plates. A technology computer-aided design (TCAD) simulation reveals that the regularly aligned inner field plates are effective in suppressing the peak electric field distribution under the anode edges, which increases VBR. The results of this work offer a simple and effective approach for reducing electric field crowding under anode edges to enhance the performance of Ga2O3-based power devices.",

keywords = "Computer simulations, Electrical transport, Electronic properties, Oxide materials, Semiconductors, Thin films",

author = "Lee, \{Hoon Ki\} and V. Janardhanam and Mun, \{Jae Kyoung\} and Jang, \{Tae Hoon\} and Shim, \{Kyu Hwan\} and Yun, \{Hyung Joong\} and Jonghan Won and Choi, \{Chel Jong\}",

note = "Publisher Copyright: {\textcopyright} 2025 Elsevier Ltd",

year = "2025",

month = jun,

day = "1",

doi = "10.1016/j.mssp.2025.109371",

language = "English",

volume = "191",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

}

TY - JOUR

T1 - Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates

AU - Lee, Hoon Ki

AU - Janardhanam, V.

AU - Mun, Jae Kyoung

AU - Jang, Tae Hoon

AU - Shim, Kyu Hwan

AU - Yun, Hyung Joong

AU - Won, Jonghan

AU - Choi, Chel Jong

PY - 2025/6/1

Y1 - 2025/6/1

N2 - In the present study, the device performance of vertical Au/Ni/β-Ga2O3 Schottky barrier diodes with regularly aligned inner field plates is investigated. The fabricated Schottky barrier diode with regularly aligned inner field plates achieved an improved breakdown voltage (VBR) of 590 V, compared to the 500 V for the diode without field plates. However, the power figure-of-merit (FOM) of the diode with inner field plates was determined to be 31.9 MWcm−2, which is lower than the FOM of 48.2 MWcm−2 for that of the diode without field plates. The FOM is decreased in the former because of its increased turn-on resistance associated with decreasing effective device area caused by the array of SiO2 field plates. A technology computer-aided design (TCAD) simulation reveals that the regularly aligned inner field plates are effective in suppressing the peak electric field distribution under the anode edges, which increases VBR. The results of this work offer a simple and effective approach for reducing electric field crowding under anode edges to enhance the performance of Ga2O3-based power devices.

AB - In the present study, the device performance of vertical Au/Ni/β-Ga2O3 Schottky barrier diodes with regularly aligned inner field plates is investigated. The fabricated Schottky barrier diode with regularly aligned inner field plates achieved an improved breakdown voltage (VBR) of 590 V, compared to the 500 V for the diode without field plates. However, the power figure-of-merit (FOM) of the diode with inner field plates was determined to be 31.9 MWcm−2, which is lower than the FOM of 48.2 MWcm−2 for that of the diode without field plates. The FOM is decreased in the former because of its increased turn-on resistance associated with decreasing effective device area caused by the array of SiO2 field plates. A technology computer-aided design (TCAD) simulation reveals that the regularly aligned inner field plates are effective in suppressing the peak electric field distribution under the anode edges, which increases VBR. The results of this work offer a simple and effective approach for reducing electric field crowding under anode edges to enhance the performance of Ga2O3-based power devices.

KW - Computer simulations

KW - Electrical transport

KW - Electronic properties

KW - Oxide materials

KW - Semiconductors

KW - Thin films

UR - https://www.scopus.com/pages/publications/85217714130

U2 - 10.1016/j.mssp.2025.109371

DO - 10.1016/j.mssp.2025.109371

M3 - Journal article

AN - SCOPUS:85217714130

SN - 1369-8001

VL - 191

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

M1 - 109371

ER -

Enhancement of device performance in vertical Au/Ni/β-Ga₂O₃ Schottky barrier diodes using regularly aligned inner field plates

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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Recent Research from Jeonbuk National University Highlight Findings in Semiconductor Processing (Enhancement of Device Performance In Vertical Au/ni//3-ga2o3 Schottky Barrier Diodes Using Regularly Aligned Inner Field Plates)

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Enhancement of device performance in vertical Au/Ni/β-Ga2O3 Schottky barrier diodes using regularly aligned inner field plates

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

Access to Document

Other files and links

Fingerprint

Press/Media

Recent Research from Jeonbuk National University Highlight Findings in Semiconductor Processing (Enhancement of Device Performance In Vertical Au/ni//3-ga2o3 Schottky Barrier Diodes Using Regularly Aligned Inner Field Plates)

Cite this

Enhancement of device performance in vertical Au/Ni/β-Ga₂O₃ Schottky barrier diodes using regularly aligned inner field plates