Enhancement of light extraction GaN light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive-index layer

Jong Kyu Kim; J. Q. Xi; Hong Luo; Jaehee Cho; Cheolsoo Sone; Yongjo Park; E. Fred Schubert

doi:10.1117/12.621871

Enhancement of light extraction GaN light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive-index layer

Jong Kyu Kim^*
, J. Q. Xi
, Hong Luo
, Jaehee Cho
, Cheolsoo Sone
, Yongjo Park
, E. Fred Schubert

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Rensselaer Polytechnic Institute
Samsung

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Enhancement of light extraction in GaN light-emitting diodes (LEDs) employing omnidirectional reflectors (ODRs) is presented. The ODR consists of GaN, ITO nanorod low-refractive-index layer, and an Ag layer. An array of ITO nanorods is deposited by oblique-angle deposition using e-beam evaporation. The refractive index of the ITO nanorods is 1.34 at 461 nm, significantly lower that that of dense ITO, which is n = 2.06 at 461 nm. It is experimentally shown that the GaN LED with GaN/ITO nanorods/Ag ODR show much better electrical properties and higher light-extraction efficiency than LEDs with Ag contact. This is attributed to enhanced reflectivity of the ODR by using an ITO low-refractive-index layer with high transparency, high conductivity, and low refractive index.

Original language	English
Article number	59410K
Pages (from-to)	1-6
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5941
DOIs	https://doi.org/10.1117/12.621871
State	Published - 2005
Event	Fifth International Conference on Solid State Lighting - San Diego, CA, United States Duration: 2005.08.1 → 2005.08.4

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@article{1757d068add446f083b38eede19c7626,

title = "Enhancement of light extraction GaN light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive-index layer",

abstract = "Enhancement of light extraction in GaN light-emitting diodes (LEDs) employing omnidirectional reflectors (ODRs) is presented. The ODR consists of GaN, ITO nanorod low-refractive-index layer, and an Ag layer. An array of ITO nanorods is deposited by oblique-angle deposition using e-beam evaporation. The refractive index of the ITO nanorods is 1.34 at 461 nm, significantly lower that that of dense ITO, which is n = 2.06 at 461 nm. It is experimentally shown that the GaN LED with GaN/ITO nanorods/Ag ODR show much better electrical properties and higher light-extraction efficiency than LEDs with Ag contact. This is attributed to enhanced reflectivity of the ODR by using an ITO low-refractive-index layer with high transparency, high conductivity, and low refractive index.",

author = "Kim, \{Jong Kyu\} and Xi, \{J. Q.\} and Hong Luo and Jaehee Cho and Cheolsoo Sone and Yongjo Park and \{Fred Schubert\}, E.",

year = "2005",

doi = "10.1117/12.621871",

language = "English",

volume = "5941",

pages = "1--6",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

note = "Fifth International Conference on Solid State Lighting ; Conference date: 01-08-2005 Through 04-08-2005",

}

TY - JOUR

T1 - Enhancement of light extraction GaN light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive-index layer

AU - Kim, Jong Kyu

AU - Xi, J. Q.

AU - Luo, Hong

AU - Cho, Jaehee

AU - Sone, Cheolsoo

AU - Park, Yongjo

AU - Fred Schubert, E.

PY - 2005

Y1 - 2005

N2 - Enhancement of light extraction in GaN light-emitting diodes (LEDs) employing omnidirectional reflectors (ODRs) is presented. The ODR consists of GaN, ITO nanorod low-refractive-index layer, and an Ag layer. An array of ITO nanorods is deposited by oblique-angle deposition using e-beam evaporation. The refractive index of the ITO nanorods is 1.34 at 461 nm, significantly lower that that of dense ITO, which is n = 2.06 at 461 nm. It is experimentally shown that the GaN LED with GaN/ITO nanorods/Ag ODR show much better electrical properties and higher light-extraction efficiency than LEDs with Ag contact. This is attributed to enhanced reflectivity of the ODR by using an ITO low-refractive-index layer with high transparency, high conductivity, and low refractive index.

AB - Enhancement of light extraction in GaN light-emitting diodes (LEDs) employing omnidirectional reflectors (ODRs) is presented. The ODR consists of GaN, ITO nanorod low-refractive-index layer, and an Ag layer. An array of ITO nanorods is deposited by oblique-angle deposition using e-beam evaporation. The refractive index of the ITO nanorods is 1.34 at 461 nm, significantly lower that that of dense ITO, which is n = 2.06 at 461 nm. It is experimentally shown that the GaN LED with GaN/ITO nanorods/Ag ODR show much better electrical properties and higher light-extraction efficiency than LEDs with Ag contact. This is attributed to enhanced reflectivity of the ODR by using an ITO low-refractive-index layer with high transparency, high conductivity, and low refractive index.

UR - https://www.scopus.com/pages/publications/31844453191

U2 - 10.1117/12.621871

DO - 10.1117/12.621871

M3 - Conference article

AN - SCOPUS:31844453191

SN - 0277-786X

VL - 5941

SP - 1

EP - 6

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 59410K

T2 - Fifth International Conference on Solid State Lighting

Y2 - 1 August 2005 through 4 August 2005

ER -

Enhancement of light extraction GaN light-emitting diodes by omni-directional reflectors with ITO nanorod low-refractive-index layer

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