Enhancement of performance of Si nanocrystal light-emitting diodes by using Ag nanodots

Chul Huh; Jae Heon Shin; Kyung Hyun Kim; Chel Jong Choi; Kwan Sik Cho; Jongcheol Hong; Gun Yong Sung

doi:10.1109/LPT.2006.883249

Enhancement of performance of Si nanocrystal light-emitting diodes by using Ag nanodots

Chul Huh^*
, Jae Heon Shin
, Kyung Hyun Kim
, Chel Jong Choi
, Kwan Sik Cho
, Jongcheol Hong
, Gun Yong Sung

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Journal article › peer-review

8 Scopus citations

Abstract

Effects of Ag nanodots on silicon nanocrystal (nc-Si) light-emitting diodes (LEDs) are investigated. The electrical property of the nc-Si LED with Ag nanodots was enhanced compared to that of the nc-Si LED without ones. This was attributed to the increase in the electric field due to the formation of Ag nanodots at the contact interface, indicating that the current could flow more efficiently from the indium tin oxide layer to n-SiC film. The formation of Ag nanodots with a size of 3 ∼ 6 nm was confirmed by using a high-resolution transmission electron microscope analysis. Moreover, light output power of the nc-Si LED with Ag nanodots was enhanced.

Original language	English
Pages (from-to)	2068-2070
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	18
Issue number	19
DOIs	https://doi.org/10.1109/LPT.2006.883249
State	Published - 2006.10.1

Keywords

Ag nanodot
Light-emitting diode (LED)
Silicon nanocrystal (nc-Si)
Silicon nitride

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10.1109/LPT.2006.883249

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@article{c225e36011ba466aa2d986211ae0477a,

title = "Enhancement of performance of Si nanocrystal light-emitting diodes by using Ag nanodots",

abstract = "Effects of Ag nanodots on silicon nanocrystal (nc-Si) light-emitting diodes (LEDs) are investigated. The electrical property of the nc-Si LED with Ag nanodots was enhanced compared to that of the nc-Si LED without ones. This was attributed to the increase in the electric field due to the formation of Ag nanodots at the contact interface, indicating that the current could flow more efficiently from the indium tin oxide layer to n-SiC film. The formation of Ag nanodots with a size of 3 ∼ 6 nm was confirmed by using a high-resolution transmission electron microscope analysis. Moreover, light output power of the nc-Si LED with Ag nanodots was enhanced.",

keywords = "Ag nanodot, Light-emitting diode (LED), Silicon nanocrystal (nc-Si), Silicon nitride",

author = "Chul Huh and Shin, \{Jae Heon\} and Kim, \{Kyung Hyun\} and Choi, \{Chel Jong\} and Cho, \{Kwan Sik\} and Jongcheol Hong and Sung, \{Gun Yong\}",

year = "2006",

month = oct,

day = "1",

doi = "10.1109/LPT.2006.883249",

language = "English",

volume = "18",

pages = "2068--2070",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

number = "19",

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TY - JOUR

T1 - Enhancement of performance of Si nanocrystal light-emitting diodes by using Ag nanodots

AU - Huh, Chul

AU - Shin, Jae Heon

AU - Kim, Kyung Hyun

AU - Choi, Chel Jong

AU - Cho, Kwan Sik

AU - Hong, Jongcheol

AU - Sung, Gun Yong

PY - 2006/10/1

Y1 - 2006/10/1

N2 - Effects of Ag nanodots on silicon nanocrystal (nc-Si) light-emitting diodes (LEDs) are investigated. The electrical property of the nc-Si LED with Ag nanodots was enhanced compared to that of the nc-Si LED without ones. This was attributed to the increase in the electric field due to the formation of Ag nanodots at the contact interface, indicating that the current could flow more efficiently from the indium tin oxide layer to n-SiC film. The formation of Ag nanodots with a size of 3 ∼ 6 nm was confirmed by using a high-resolution transmission electron microscope analysis. Moreover, light output power of the nc-Si LED with Ag nanodots was enhanced.

AB - Effects of Ag nanodots on silicon nanocrystal (nc-Si) light-emitting diodes (LEDs) are investigated. The electrical property of the nc-Si LED with Ag nanodots was enhanced compared to that of the nc-Si LED without ones. This was attributed to the increase in the electric field due to the formation of Ag nanodots at the contact interface, indicating that the current could flow more efficiently from the indium tin oxide layer to n-SiC film. The formation of Ag nanodots with a size of 3 ∼ 6 nm was confirmed by using a high-resolution transmission electron microscope analysis. Moreover, light output power of the nc-Si LED with Ag nanodots was enhanced.

KW - Ag nanodot

KW - Light-emitting diode (LED)

KW - Silicon nanocrystal (nc-Si)

KW - Silicon nitride

UR - https://www.scopus.com/pages/publications/33845364764

U2 - 10.1109/LPT.2006.883249

DO - 10.1109/LPT.2006.883249

M3 - Journal article

AN - SCOPUS:33845364764

SN - 1041-1135

VL - 18

SP - 2068

EP - 2070

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 19

ER -

Enhancement of performance of Si nanocrystal light-emitting diodes by using Ag nanodots

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Keywords

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