Enhancement of the light output of GaN-based ultraviolet light-emitting diodes by a one-dimensional nanopatterning process

We have demonstrated the enhancement of the output power of ultraviolet GaN-based light-emitting diodes (LEDs) by using one-dimensionally nanopatterned Cu-doped indium oxide(CIO)/indium tin oxide (ITO) p -type contact layers. The one-dimensional (1D) nanopatterns (250 nm in width and 100 nm in depth) are defined using a Ti O2 1D nanomask fabricated by means of a surface relief grating technique. When fabricated with the nanopatterned p -contact layers, the output power of LEDs is improved by 40 and 63% at 20 mA as compared to those fabricated with the unpatterned CIO/ITO and conventional NiAu contacts, respectively.