Erratum: Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs (Thin Solid Films (2012) 520:21 (6589-6594))

Ju Young Lim; Jin Dong Song; Jae Pyoung Ahn; Heesuk Rho; Hae Suk Yang

doi:10.1016/j.tsf.2012.12.001

Erratum: Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs (Thin Solid Films (2012) 520:21 (6589-6594))

Ju Young Lim
, Jin Dong Song^*
, Jae Pyoung Ahn
, Heesuk Rho
, Hae Suk Yang

^*Corresponding author for this work

Department of Physics

Korea Institute of Science and Technology
Chung-Ang University
Korea Photonics Technology Institute

Research output: Contribution to journal › Comment/debate

Original language	English
Pages (from-to)	383
Number of pages	1
Journal	Thin Solid Films
Volume	527
DOIs	https://doi.org/10.1016/j.tsf.2012.12.001
State	Published - 2013.01.1

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Physics & Astronomy

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10.1016/j.tsf.2012.12.001

Cite this

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title = "Erratum: Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs (Thin Solid Films (2012) 520:21 (6589-6594))",

author = "Lim, \{Ju Young\} and Song, \{Jin Dong\} and Ahn, \{Jae Pyoung\} and Heesuk Rho and Yang, \{Hae Suk\}",

year = "2013",

month = jan,

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doi = "10.1016/j.tsf.2012.12.001",

language = "English",

volume = "527",

pages = "383",

journal = "Thin Solid Films",

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T2 - Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs (Thin Solid Films (2012) 520:21 (6589-6594))

AU - Lim, Ju Young

AU - Song, Jin Dong

AU - Ahn, Jae Pyoung

AU - Rho, Heesuk

AU - Yang, Hae Suk

PY - 2013/1/1

Y1 - 2013/1/1

UR - https://www.scopus.com/pages/publications/84872613350

U2 - 10.1016/j.tsf.2012.12.001

DO - 10.1016/j.tsf.2012.12.001

M3 - Comment/debate

AN - SCOPUS:84872613350

SN - 0040-6090

VL - 527

SP - 383

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Erratum: Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs (Thin Solid Films (2012) 520:21 (6589-6594))

Quacquarelli Symonds(QS) Subject Topics

Access to Document

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