Erratum: Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN (Applied Physics Letters (2006) 89 (262115))

Dong Seok Leem; Tae Wook Kim; Takhee Lee; Ja Soon Jang; Young Woo Ok; Tae Yeon Seong

doi:10.1063/1.2460605

Erratum: Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN (Applied Physics Letters (2006) 89 (262115))

Dong Seok Leem
, Tae Wook Kim
, Takhee Lee
, Ja Soon Jang
, Young Woo Ok
, Tae Yeon Seong^*

^*Corresponding author for this work

Department of Flexible and Printable Electronics

Seoul National University
Gwangju Institute of Science and Technology
Korea University

Research output: Contribution to journal › Comment/debate

1 Scopus citations

Original language	English
Article number	079901
Journal	Applied Physics Letters
Volume	90
Issue number	7
DOIs	https://doi.org/10.1063/1.2460605
State	Published - 2007

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10.1063/1.2460605

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AU - Lee, Takhee

AU - Jang, Ja Soon

AU - Ok, Young Woo

AU - Seong, Tae Yeon

PY - 2007

Y1 - 2007

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M3 - Comment/debate

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SN - 0003-6951

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JO - Applied Physics Letters

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IS - 7

M1 - 079901

ER -

Erratum: Formation mechanism of cerium oxide-doped indium oxide/Ag ohmic contacts on p-type GaN (Applied Physics Letters (2006) 89 (262115))

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