Erratum: GaAs quantum dots with a high density on a GaAs (111)A substrate (Appl. Phys. Lett. (2006) 88(24) (241911) (10.1063/1.2213012))

Jong su Kim; Nobuyuki Koguchi; Mun Seok Jeong; Clare C. Byeon; Do Kyeong ko; Jongmin Lee; Jin Soo Kim; In Soo Kim

doi:10.1063/1.2803768

Erratum: GaAs quantum dots with a high density on a GaAs (111)A substrate (Appl. Phys. Lett. (2006) 88(24) (241911) (10.1063/1.2213012))

Jong su Kim
, Nobuyuki Koguchi
, Mun Seok Jeong
, Clare C. Byeon
, Do Kyeong ko
, Jongmin Lee
, Jin Soo Kim
, In Soo Kim

Information Materials Engineering

National Institute for Materials Science Tsukuba
Gwangju Institute of Science and Technology
Kyungwoon University

Research output: Contribution to journal › Comment/debate

Abstract

In the original publication titled GaAs quantum dots with a high density on a GaAs (111)A substrate, by Kim et al. [Appl. Phys. Lett. 88, 241911 (2006)], we have recently found an error word in the 2nd paragraph (lines 17-21) of column 1 on page 241911-2. It should read as It implies the Ga sticking coefficient on the (111)A surface is much larger than that of the (001) surface at the given temperature regime resulting in the relatively short migration length of Ga on the (111)A surface.

Original language	English
Pages (from-to)	241911
Number of pages	1
Journal	Applied Physics Letters
Volume	88
Issue number	17
DOIs	https://doi.org/10.1063/1.2803768
State	Published - 2007.10.22

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title = "Erratum: GaAs quantum dots with a high density on a GaAs (111)A substrate (Appl. Phys. Lett. (2006) 88(24) (241911) (10.1063/1.2213012))",

abstract = "In the original publication titled GaAs quantum dots with a high density on a GaAs (111)A substrate, by Kim et al. [Appl. Phys. Lett. 88, 241911 (2006)], we have recently found an error word in the 2nd paragraph (lines 17-21) of column 1 on page 241911-2. It should read as It implies the Ga sticking coefficient on the (111)A surface is much larger than that of the (001) surface at the given temperature regime resulting in the relatively short migration length of Ga on the (111)A surface.",

author = "Kim, \{Jong su\} and Nobuyuki Koguchi and Jeong, \{Mun Seok\} and Byeon, \{Clare C.\} and ko, \{Do Kyeong\} and Jongmin Lee and Kim, \{Jin Soo\} and Kim, \{In Soo\}",

year = "2007",

month = oct,

day = "22",

doi = "10.1063/1.2803768",

language = "English",

volume = "88",

pages = "241911",

journal = "Applied Physics Letters",

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T2 - GaAs quantum dots with a high density on a GaAs (111)A substrate (Appl. Phys. Lett. (2006) 88(24) (241911) (10.1063/1.2213012))

AU - Kim, Jong su

AU - Koguchi, Nobuyuki

AU - Jeong, Mun Seok

AU - Byeon, Clare C.

AU - ko, Do Kyeong

AU - Lee, Jongmin

AU - Kim, Jin Soo

AU - Kim, In Soo

PY - 2007/10/22

Y1 - 2007/10/22

N2 - In the original publication titled GaAs quantum dots with a high density on a GaAs (111)A substrate, by Kim et al. [Appl. Phys. Lett. 88, 241911 (2006)], we have recently found an error word in the 2nd paragraph (lines 17-21) of column 1 on page 241911-2. It should read as It implies the Ga sticking coefficient on the (111)A surface is much larger than that of the (001) surface at the given temperature regime resulting in the relatively short migration length of Ga on the (111)A surface.

AB - In the original publication titled GaAs quantum dots with a high density on a GaAs (111)A substrate, by Kim et al. [Appl. Phys. Lett. 88, 241911 (2006)], we have recently found an error word in the 2nd paragraph (lines 17-21) of column 1 on page 241911-2. It should read as It implies the Ga sticking coefficient on the (111)A surface is much larger than that of the (001) surface at the given temperature regime resulting in the relatively short migration length of Ga on the (111)A surface.

UR - https://www.scopus.com/pages/publications/85023621912

U2 - 10.1063/1.2803768

DO - 10.1063/1.2803768

M3 - Comment/debate

AN - SCOPUS:85023621912

SN - 0003-6951

VL - 88

SP - 241911

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Erratum: GaAs quantum dots with a high density on a GaAs (111)A substrate (Appl. Phys. Lett. (2006) 88(24) (241911) (10.1063/1.2213012))

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