Erratum: High efficiency GaN-based light-emitting diodes fabricated on dielectric-mask-embedded structures (Applied Physics Letters (2009) 95 (011108))

  • J. W. Lee
  • , C. Sone
  • , Y. Park
  • , S. N. Lee
  • , J. H. Ryou
  • , R. D. Dupuis
  • , C. H. Hong
  • , H. Kim

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number139902
JournalApplied Physics Letters
Volume95
Issue number13
DOIs
StatePublished - 2009

Quacquarelli Symonds(QS) Subject Topics

  • Physics & Astronomy

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