Erratum: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application (Scientific Reports (2014) 4 (4948) DOI: 10.1038/srep04948)

Eunha Lee; Anass Benayad; Taeho Shin; Hyungik Lee; Dong Su Ko; Tae Sang Kim; Kyoung Seok Son; Myungkwan Ryu; Sanghun Jeon; Gyeong Su Park

doi:10.1038/srep06897

Erratum: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application (Scientific Reports (2014) 4 (4948) DOI: 10.1038/srep04948)

Eunha Lee
, Anass Benayad
, Taeho Shin
, Hyungik Lee
, Dong Su Ko
, Tae Sang Kim
, Kyoung Seok Son
, Myungkwan Ryu
, Sanghun Jeon
, Gyeong Su Park

Department of Chemistry

Research output: Contribution to journal › Comment/debate

2 Scopus citations

Original language	English
Article number	6897
Journal	Scientific Reports
Volume	4
DOIs	https://doi.org/10.1038/srep06897
State	Published - 2014.11.3

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10.1038/srep06897

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Lee, E., Benayad, A., Shin, T., Lee, H., Ko, D. S., Kim, T. S., Son, K. S., Ryu, M., Jeon, S., & Park, G. S. (2014). Erratum: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application (Scientific Reports (2014) 4 (4948) DOI: 10.1038/srep04948). Scientific Reports, 4, Article 6897. https://doi.org/10.1038/srep06897

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title = "Erratum: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application (Scientific Reports (2014) 4 (4948) DOI: 10.1038/srep04948)",

author = "Eunha Lee and Anass Benayad and Taeho Shin and Hyungik Lee and Ko, \{Dong Su\} and Kim, \{Tae Sang\} and Son, \{Kyoung Seok\} and Myungkwan Ryu and Sanghun Jeon and Park, \{Gyeong Su\}",

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Lee, E, Benayad, A, Shin, T, Lee, H, Ko, DS, Kim, TS, Son, KS, Ryu, M, Jeon, S & Park, GS 2014, 'Erratum: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application (Scientific Reports (2014) 4 (4948) DOI: 10.1038/srep04948)', Scientific Reports, vol. 4, 6897. https://doi.org/10.1038/srep06897

Erratum: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application (Scientific Reports (2014) 4 (4948) DOI: 10.1038/srep04948). / Lee, Eunha; Benayad, Anass; Shin, Taeho et al.
In: Scientific Reports, Vol. 4, 6897, 03.11.2014.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application (Scientific Reports (2014) 4 (4948) DOI: 10.1038/srep04948)

AU - Lee, Eunha

AU - Benayad, Anass

AU - Shin, Taeho

AU - Lee, Hyungik

AU - Ko, Dong Su

AU - Kim, Tae Sang

AU - Son, Kyoung Seok

AU - Ryu, Myungkwan

AU - Jeon, Sanghun

AU - Park, Gyeong Su

PY - 2014/11/3

Y1 - 2014/11/3

UR - https://www.scopus.com/pages/publications/84954285056

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DO - 10.1038/srep06897

M3 - Comment/debate

AN - SCOPUS:84954285056

SN - 2045-2322

VL - 4

JO - Scientific Reports

JF - Scientific Reports

M1 - 6897

ER -

Erratum: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application (Scientific Reports (2014) 4 (4948) DOI: 10.1038/srep04948)

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