@inproceedings{927b057a438348bb965131117362f433,
title = "Excitation power dependence of photoluminescence from GaAs quantum dot prepared by droplet epitaxy method",
abstract = "GaAs quantum dot (QD) was grown by droplet epitaxy (DE) method and the excitation power dependence of photoluminescence (PL) were carried out. To investigate the effect of annealing temperature on QDs optical properties, the two step RTA process was carried out in a various temperature range from 800 to 1000°C. As the thermal annealing temperature increases, the PL peak position is blue-shifted due to the change of the composition and size distribution of QDs, and the highest PL intensity is observed at the sample annealed at 900°C. The integrated PL intensity (I PL) is plotted against the excitation density in a log-log scale and the slope was calculated.",
keywords = "Droplet epitaxy, Gallium arsenide, Photoluminescence, Quantum dot",
author = "Choi, \{H. Y.\} and Kim, \{D. Y.\} and Cho, \{M. Y.\} and Kim, \{G. S.\} and Jeon, \{S. M.\} and Yim, \{K. G.\} and Kim, \{M. S.\} and Lee, \{D. Y.\} and Kim, \{J. S.\} and Kim, \{J. S.\} and Son, \{J. S.\} and Lee, \{J. I.\} and Leem, \{J. Y.\}",
year = "2011",
doi = "10.1063/1.3666494",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "543--544",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}