Extraction of separated source and drain resistances in amorphous Indium-Gallium-Zinc oxide TFTs through C-V characterization

Hagyoul Bae; Sungchul Kim; Minkyung Bae; Ja Sun Shin; Dongsik Kong; Hyunkwang Jung; Jaeman Jang; Jieun Lee; Dae Hwan Kim; Dong Myong Kim

doi:10.1109/LED.2011.2127438

Extraction of separated source and drain resistances in amorphous Indium-Gallium-Zinc oxide TFTs through C-V characterization

Hagyoul Bae^*
, Sungchul Kim
, Minkyung Bae
, Ja Sun Shin
, Dongsik Kong
, Hyunkwang Jung
, Jaeman Jang
, Jieun Lee
, Dae Hwan Kim
, Dong Myong Kim

^*Corresponding author for this work

Division of Electronic Engineering

Kookmin University

Research output: Contribution to journal › Journal article › peer-review

24 Scopus citations

Abstract

Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., R_S and R_D, respectively, from the total resistance R_TOT is very important in the design, modeling, and characterization of amorphous indiumgalliumzinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I-V characterization. In this letter, we propose a simple and useful technique for separate extraction of R_S from R_D in a-IGZO TFTs through a two-terminal parallel-mode C-V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I-V characteristics.

Original language	English
Article number	5753915
Pages (from-to)	761-763
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	6
DOIs	https://doi.org/10.1109/LED.2011.2127438
State	Published - 2011.06

Keywords

Amorphous
drain resistance
nonlinear model
parameter extraction
parasitic resistance
source resistance
thinfilm transistors (TFTs)

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10.1109/LED.2011.2127438

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title = "Extraction of separated source and drain resistances in amorphous Indium-Gallium-Zinc oxide TFTs through C-V characterization",

abstract = "Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD, respectively, from the total resistance RTOT is very important in the design, modeling, and characterization of amorphous indiumgalliumzinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I-V characterization. In this letter, we propose a simple and useful technique for separate extraction of RS from RD in a-IGZO TFTs through a two-terminal parallel-mode C-V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I-V characteristics.",

keywords = "Amorphous, drain resistance, nonlinear model, parameter extraction, parasitic resistance, source resistance, thinfilm transistors (TFTs)",

author = "Hagyoul Bae and Sungchul Kim and Minkyung Bae and Shin, \{Ja Sun\} and Dongsik Kong and Hyunkwang Jung and Jaeman Jang and Jieun Lee and Kim, \{Dae Hwan\} and Kim, \{Dong Myong\}",

year = "2011",

month = jun,

doi = "10.1109/LED.2011.2127438",

language = "English",

volume = "32",

pages = "761--763",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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TY - JOUR

T1 - Extraction of separated source and drain resistances in amorphous Indium-Gallium-Zinc oxide TFTs through C-V characterization

AU - Bae, Hagyoul

AU - Kim, Sungchul

AU - Bae, Minkyung

AU - Shin, Ja Sun

AU - Kong, Dongsik

AU - Jung, Hyunkwang

AU - Jang, Jaeman

AU - Lee, Jieun

AU - Kim, Dae Hwan

AU - Kim, Dong Myong

PY - 2011/6

Y1 - 2011/6

N2 - Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD, respectively, from the total resistance RTOT is very important in the design, modeling, and characterization of amorphous indiumgalliumzinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I-V characterization. In this letter, we propose a simple and useful technique for separate extraction of RS from RD in a-IGZO TFTs through a two-terminal parallel-mode C-V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I-V characteristics.

AB - Considering asymmetry caused by layout, process, and device degradation, separate extraction of the source and drain resistances, i.e., RS and RD, respectively, from the total resistance RTOT is very important in the design, modeling, and characterization of amorphous indiumgalliumzinc oxide (a-IGZO) thin-film transistors (TFTs). Due to the insulated gate structure, however, separate extraction is difficult through direct-current I-V characterization. In this letter, we propose a simple and useful technique for separate extraction of RS from RD in a-IGZO TFTs through a two-terminal parallel-mode C-V technique. We experimentally verified the validity of the proposed technique by comparing the result with the source-to-drain resistance from the I-V characteristics.

KW - Amorphous

KW - drain resistance

KW - nonlinear model

KW - parameter extraction

KW - parasitic resistance

KW - source resistance

KW - thinfilm transistors (TFTs)

UR - https://www.scopus.com/pages/publications/79957586947

U2 - 10.1109/LED.2011.2127438

DO - 10.1109/LED.2011.2127438

M3 - Journal article

AN - SCOPUS:79957586947

SN - 0741-3106

VL - 32

SP - 761

EP - 763

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 5753915

ER -

Extraction of separated source and drain resistances in amorphous Indium-Gallium-Zinc oxide TFTs through C-V characterization

Abstract

Keywords

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