Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

K. S. Kim; C. H. Hong; W. H. Lee; C. S. Kim; O. H. Cha; G. M. Yang; E. K. Suh; K. Y. Lim; H. J. Lee; H. K. Cho; J. Y. Lee; J. M. Seo

doi:10.1557/s1092578300005214

Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

K. S. Kim^*
, C. H. Hong
, W. H. Lee
, C. S. Kim
, O. H. Cha
, G. M. Yang
, E. K. Suh
, K. Y. Lim
, H. J. Lee
, H. K. Cho
, J. Y. Lee
, J. M. Seo

^*Corresponding author for this work

Department of Semiconductor Science and Technology

Research output: Contribution to journal › Journal article › peer-review

Abstract

Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN esxhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a {1-102} facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.

Original language	English
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	5
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1557/s1092578300005214
State	Published - 2000

Quacquarelli Symonds(QS) Subject Topics

Materials Science

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10.1557/s1092578300005214

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@article{70f17865c713496597cdd6419ac47a7d,

title = "Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications",

abstract = "Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN esxhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a \{1-102\} facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.",

author = "Kim, \{K. S.\} and Hong, \{C. H.\} and Lee, \{W. H.\} and Kim, \{C. S.\} and Cha, \{O. H.\} and Yang, \{G. M.\} and Suh, \{E. K.\} and Lim, \{K. Y.\} and Lee, \{H. J.\} and Cho, \{H. K.\} and Lee, \{J. Y.\} and Seo, \{J. M.\}",

year = "2000",

doi = "10.1557/s1092578300005214",

language = "English",

volume = "5",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

number = "SUPPL. 1",

}

TY - JOUR

T1 - Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

AU - Kim, K. S.

AU - Hong, C. H.

AU - Lee, W. H.

AU - Kim, C. S.

AU - Cha, O. H.

AU - Yang, G. M.

AU - Suh, E. K.

AU - Lim, K. Y.

AU - Lee, H. J.

AU - Cho, H. K.

AU - Lee, J. Y.

AU - Seo, J. M.

PY - 2000

Y1 - 2000

N2 - Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN esxhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a {1-102} facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.

AB - Thin layers of InGaN were grown by metalorganic chemical vapor deposition and characterized with atomic force microscopy and high-resolution transmission electron microscopy. InGaN deposited on GaN esxhibits a Stranski-Krastanov growth mode, including 2D wetting layer and 3D self-assembled quantum dots. Besides, we observed that the formed InGaN nano-scale dots have a trapezoidal shape with a {1-102} facet with respect to (0002) surface. Visible spectral range from UV to green was easily obtained by changing InGaN quantum well thickness up to 2.3 nm.

UR - https://www.scopus.com/pages/publications/3242776962

U2 - 10.1557/s1092578300005214

DO - 10.1557/s1092578300005214

M3 - Journal article

AN - SCOPUS:3242776962

SN - 1092-5783

VL - 5

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

IS - SUPPL. 1

ER -

Fabrication and characterization of InGaN nano-scale dots for blue and green LED applications

Abstract

Quacquarelli Symonds(QS) Subject Topics

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