Fabrication and thickness dependent properties of ferroelectric heterostructure

Y. S. Kim; D. H. Kim; J. D. Kim; T. W. Noh; J. H. Kong; Y. D. Park; S. D. Bu; J. G. Yoon

Fabrication and thickness dependent properties of ferroelectric heterostructure

Y. S. Kim^*
, D. H. Kim
, J. D. Kim
, T. W. Noh
, J. H. Kong
, Y. D. Park
, S. D. Bu
, J. G. Yoon

^*Corresponding author for this work

Department of Physics

Seoul National University
Suwon University

Research output: Contribution to journal › Journal article › peer-review

21 Scopus citations

Abstract

7A high quality epitaxial SrRuO ₃(SRO)/BaTiO ₃(BTO)/SRO/SrTiO ₃ (001) heterostructure was grown by pulsed laser deposition with in situ reflection high-energy electron diffraction. The growth mode and crystallinity of the heterostructure were verified by X-ray diffraction and atomic force microscopy. Ferroelectric (FE) hysteresis loops could be observed down to 9 nm of BTO thickness. Remanent polarization decreased as the FE layer thickness decreased. In addition, all the capacitors showed imprint phenomena. The strength of the imprint increased as the BTO layer thickness decreased. Possible origins of the thickness-dependent imprint and the polarization reduction are discussed.

Original language	English
Pages (from-to)	55-58
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	46
Issue number	1
State	Published - 2005.01

Keywords

Critical thickness
Ferroelectricity
Heterostructure
Imprint
Size effect
Thin film

Quacquarelli Symonds(QS) Subject Topics

Physics & Astronomy

Cite this

@article{128c239da026401e9b1de1d70f230a33,

title = "Fabrication and thickness dependent properties of ferroelectric heterostructure",

abstract = "7A high quality epitaxial SrRuO 3(SRO)/BaTiO 3(BTO)/SRO/SrTiO 3 (001) heterostructure was grown by pulsed laser deposition with in situ reflection high-energy electron diffraction. The growth mode and crystallinity of the heterostructure were verified by X-ray diffraction and atomic force microscopy. Ferroelectric (FE) hysteresis loops could be observed down to 9 nm of BTO thickness. Remanent polarization decreased as the FE layer thickness decreased. In addition, all the capacitors showed imprint phenomena. The strength of the imprint increased as the BTO layer thickness decreased. Possible origins of the thickness-dependent imprint and the polarization reduction are discussed.",

keywords = "Critical thickness, Ferroelectricity, Heterostructure, Imprint, Size effect, Thin film",

author = "Kim, \{Y. S.\} and Kim, \{D. H.\} and Kim, \{J. D.\} and Noh, \{T. W.\} and Kong, \{J. H.\} and Park, \{Y. D.\} and Bu, \{S. D.\} and Yoon, \{J. G.\}",

year = "2005",

month = jan,

language = "English",

volume = "46",

pages = "55--58",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

number = "1",

}

TY - JOUR

T1 - Fabrication and thickness dependent properties of ferroelectric heterostructure

AU - Kim, Y. S.

AU - Kim, D. H.

AU - Kim, J. D.

AU - Noh, T. W.

AU - Kong, J. H.

AU - Park, Y. D.

AU - Bu, S. D.

AU - Yoon, J. G.

PY - 2005/1

Y1 - 2005/1

N2 - 7A high quality epitaxial SrRuO 3(SRO)/BaTiO 3(BTO)/SRO/SrTiO 3 (001) heterostructure was grown by pulsed laser deposition with in situ reflection high-energy electron diffraction. The growth mode and crystallinity of the heterostructure were verified by X-ray diffraction and atomic force microscopy. Ferroelectric (FE) hysteresis loops could be observed down to 9 nm of BTO thickness. Remanent polarization decreased as the FE layer thickness decreased. In addition, all the capacitors showed imprint phenomena. The strength of the imprint increased as the BTO layer thickness decreased. Possible origins of the thickness-dependent imprint and the polarization reduction are discussed.

AB - 7A high quality epitaxial SrRuO 3(SRO)/BaTiO 3(BTO)/SRO/SrTiO 3 (001) heterostructure was grown by pulsed laser deposition with in situ reflection high-energy electron diffraction. The growth mode and crystallinity of the heterostructure were verified by X-ray diffraction and atomic force microscopy. Ferroelectric (FE) hysteresis loops could be observed down to 9 nm of BTO thickness. Remanent polarization decreased as the FE layer thickness decreased. In addition, all the capacitors showed imprint phenomena. The strength of the imprint increased as the BTO layer thickness decreased. Possible origins of the thickness-dependent imprint and the polarization reduction are discussed.

KW - Critical thickness

KW - Ferroelectricity

KW - Heterostructure

KW - Imprint

KW - Size effect

KW - Thin film

UR - https://www.scopus.com/pages/publications/12944250788

M3 - Journal article

AN - SCOPUS:12944250788

SN - 0374-4884

VL - 46

SP - 55

EP - 58

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

Fabrication and thickness dependent properties of ferroelectric heterostructure

Abstract

Keywords

Quacquarelli Symonds(QS) Subject Topics

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