Fabrication of n- and p-channel Schottky Barrier thin-film transistors crystallized by excimer laser annealing and solid phase crystallization methods

Schottky barrier thin-film transistors (SB-TFT) based on polycrystalline silicon (poly-Si) films crystallized by solid phase crystallization (SPC) and excimer laser annealing (ELA) methods were fabricated for system-on-glass (SOG) application. The structure of poly-Si films by ELA and SPC methods was analyzed. The formations of platinum silicide and erbium silicide were developed for p- and n-channel metallic junctions, respectively. The fabricated SB-TFTs have a large on/off current ratio with a low leakage current. The effects of forming gas annealing (FGA) in 2% H₂/N₂ gas ambient were evaluated. As a result of FGA, significant improvements of electrical characteristics were obtained due to reduction of trap states.