Fabrication of Si1-xGex alloy nanowire FETs

Eun Kyoung Jeon; Han Kyu Sung; Jeong O. Lee; Heon Jin Choi; Ju Jin Kim

doi:10.1109/NMDC.2006.4388837

Fabrication of Si_1-xGe_x alloy nanowire FETs

Eun Kyoung Jeon^*
, Han Kyu Sung
, Jeong O. Lee
, Heon Jin Choi
, Ju Jin Kim

^*Corresponding author for this work

Department of Physics

Korea Research Institute of Chemical Technology
Jeonbuk National University
Yonsei University

Research output: Contribution to conference › Conference paper › peer-review

Abstract

we have fabricated field effect transistors (FETs) by using high quality Si_1-xGe_x alloy nanowires. To obtain stable contacts between Si_1-xGe_x alloy nanowire and Ni/Au electrodes, we annealed the samples at 300°C furnace with Ar atmosphere or RTA at 400 °C. [4] Three different Si_1-xGe_x alloy nanowires (x=5, 15, 30) were used for the fabrication of field effect transistors, and p-type gating effect observed from Si_1-xGe_x alloy nanowire devices. Among them, pronounced p-type transistor behavior, with on/off ratios as high as 10⁶ observed from Si_0.7Ge_0.3 nanowire field effect transistor.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	502-503
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388837
State	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006.10.22 → 2006.10.25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Conference

Conference	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06.10.22 → 06.10.25

Keywords

Component
SiGe alloy nanowires, field effect transistor

Quacquarelli Symonds(QS) Subject Topics

Materials Science
Engineering - Electrical & Electronic
Engineering - Petroleum

Access to Document

10.1109/NMDC.2006.4388837

Cite this

@inproceedings{939dfbeceba64d7dbdffb38f94f42aa3,

title = "Fabrication of Si1-xGex alloy nanowire FETs",

abstract = "we have fabricated field effect transistors (FETs) by using high quality Si1-xGex alloy nanowires. To obtain stable contacts between Si1-xGex alloy nanowire and Ni/Au electrodes, we annealed the samples at 300°C furnace with Ar atmosphere or RTA at 400 °C. [4] Three different Si1-xGex alloy nanowires (x=5, 15, 30) were used for the fabrication of field effect transistors, and p-type gating effect observed from Si1-xGex alloy nanowire devices. Among them, pronounced p-type transistor behavior, with on/off ratios as high as 106 observed from Si0.7Ge0.3 nanowire field effect transistor.",

keywords = "Component, SiGe alloy nanowires, field effect transistor",

author = "Jeon, \{Eun Kyoung\} and Sung, \{Han Kyu\} and Lee, \{Jeong O.\} and Choi, \{Heon Jin\} and Kim, \{Ju Jin\}",

year = "2006",

doi = "10.1109/NMDC.2006.4388837",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "502--503",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

Jeon, EK, Sung, HK, Lee, JO, Choi, HJ & Kim, JJ 2006, Fabrication of Si_1-xGe_x alloy nanowire FETs. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388837, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 502-503, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06.10.22. https://doi.org/10.1109/NMDC.2006.4388837

TY - GEN

T1 - Fabrication of Si1-xGex alloy nanowire FETs

AU - Jeon, Eun Kyoung

AU - Sung, Han Kyu

AU - Lee, Jeong O.

AU - Choi, Heon Jin

AU - Kim, Ju Jin

PY - 2006

Y1 - 2006

N2 - we have fabricated field effect transistors (FETs) by using high quality Si1-xGex alloy nanowires. To obtain stable contacts between Si1-xGex alloy nanowire and Ni/Au electrodes, we annealed the samples at 300°C furnace with Ar atmosphere or RTA at 400 °C. [4] Three different Si1-xGex alloy nanowires (x=5, 15, 30) were used for the fabrication of field effect transistors, and p-type gating effect observed from Si1-xGex alloy nanowire devices. Among them, pronounced p-type transistor behavior, with on/off ratios as high as 106 observed from Si0.7Ge0.3 nanowire field effect transistor.

AB - we have fabricated field effect transistors (FETs) by using high quality Si1-xGex alloy nanowires. To obtain stable contacts between Si1-xGex alloy nanowire and Ni/Au electrodes, we annealed the samples at 300°C furnace with Ar atmosphere or RTA at 400 °C. [4] Three different Si1-xGex alloy nanowires (x=5, 15, 30) were used for the fabrication of field effect transistors, and p-type gating effect observed from Si1-xGex alloy nanowire devices. Among them, pronounced p-type transistor behavior, with on/off ratios as high as 106 observed from Si0.7Ge0.3 nanowire field effect transistor.

KW - Component

KW - SiGe alloy nanowires, field effect transistor

UR - https://www.scopus.com/pages/publications/50249090032

U2 - 10.1109/NMDC.2006.4388837

DO - 10.1109/NMDC.2006.4388837

M3 - Conference paper

AN - SCOPUS:50249090032

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 502

EP - 503

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -